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Low pressure chemical vapor deposition (LPCVD) of β–SiC on Si(100) using MTS in a hot wall reactor

Published online by Cambridge University Press:  03 March 2011

Chien C. Chiu ,
Seshu B. Desu  and
Ching Yi Tsai
Chien C. Chiu
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State Univers ity, Blacksburg, Virginia 24061-0237
Seshu B. Desu*
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State Univers ity, Blacksburg, Virginia 24061-0237
Ching Yi Tsai
Affiliation:
Department of Engineering Science and Mechanics, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0219
*
a)Author to whom correspondence should be addressed.
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Abstract

Stoichiometric β–SiC thin films with a high preferred orientation of (111) planes were successfully deposited on Si(100) substrates at a relatively low temperature of 1050 °C from the mixture of methyltrichlorosilane (CH3SiCl3 or MTS) and H2 in a hot wall LPCVD reactor. No etching of the Si substrate and smooth topography of the deposit were observed at high H2/MTS ratios and/or low deposition pressures. The presences of excess silicon, excess carbon, or incorporated hydrogen atoms in the films were not detected. Poor topography, degradation in preferred orientation, and etching of the Si substrate were observed at high values of deposition pressure, MTS concentration, and temperature. The etching on the Si substrate was due to the out-diffusion of Si atoms from the substrate and the presence of Cl-containing radicals resulting from the decomposition of MTS molecules while transporting to the Si substrates. A deposition mechanism was proposed to model the deposition of SiC in a hot wall reactor by using (1) gas phase decomposition of MTS molecules, (2) adsorption of the intermediates on the surface, and (3) reaction of the adsorbed intermediates to form SiC. The deposition rates were predicted very well for various deposition conditions in a hot wall LPCVD reactor.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 10 , October 1993 , pp. 2617 - 2626
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1Philipp, H. P. and Taft, E. A., in Silicon Carbide, A High Temperature Semiconductorxs, edited by O'Connor, J. R. and Smiltens, J. (Pergamon Press, New York, 1960), p. 371.Google Scholar
2von Muench, W. and Pettenpaul, E., J. Appl. Phys. 48, 4823 (1977).CrossRefGoogle Scholar
3von Muench, W. and Pfaffender, I., J. Appl. Phys. 48, 4831 (1977).CrossRefGoogle Scholar
4Price, R. J., Nucl. Technol. 35, 320 (1977).CrossRefGoogle Scholar
5Sasaki, K., Samkuma, E., Misawa, S., Yoshida, S., and Gonda, S., Appl. Phys. Lett. 45, 72 (1984).CrossRefGoogle Scholar
6Cheng, T. T., Pirouz, P., and Powell, TA., in Chemistry and Defects in Semiconductor Heterostructures, edited by Kawabe, M. (Materials Research Society, Pittsburgh, PA, 1989), p. 229.Google Scholar
7Addamiano, A. and Sprague, J. A., Appl. Phys. Lett. 42, 525 (1984).CrossRefGoogle Scholar
8Chappell, M. J. and Millman, R. S., J. Mater. Sci. 9, 1933 (1974).CrossRefGoogle Scholar
9Kingon, A. I., Lutz, L. J., and Davis, R. F., J. Am. Ceram. Soc. 66, 558 (1983).CrossRefGoogle Scholar
10Ikoma, K., Yamanaka, M., Yamaguchi, H., and Schichi, Y., J. Electrochem. Soc. 138, 3028 (1991).CrossRefGoogle Scholar
11Weber, M. E. and Armentrout, P. B., J. Phys. Chem. 93, 1596 (1989).CrossRefGoogle Scholar
12Nishino, S. and Saraie, J., in Amorphous and Crystalline SiliconCarbide, edited by Harris, G. L. and Yang, C. Y-W. (Springer-Verlag, Berlin, Heidelberg, 1989), p. 45.Google Scholar
13Langlais, F., Hottier, F., and Cadoret, R., J. Cryst. Growth 56, 659 (1982).CrossRefGoogle Scholar
14Chiu, C. C. and Desu, S. B., J. Mater. Res. 8, 535 (1993).CrossRefGoogle Scholar
15Chin, J., Gantzel, P. K., and Hudson, R. G., Thin Solid Films 40, 57 (1977).CrossRefGoogle Scholar
16Kuo, D. H., Cheng, D. J., Shyy, W. J., and Hon, M. H., J. Electrochem. Soc. 137, 3688 (1990).CrossRefGoogle Scholar
17Neuschütz, D. and Salehomoum, F., in Chemical Vapor Deposition of Refractory Metals and Ceramics II, edited by Besmann, T. M., Gallois, B. M., and Warren, J. (Mater. Res. Soc. Symp. Proc. 250, Pittsburgh, PA, 1992), p. 41.Google Scholar
18Choi, B. J., Jeun, S. H., and Kim, D. R., J. Eur. Ceram. Soc. 9, 357 (1992).CrossRefGoogle Scholar
19Chu, C-H., Lu, Y-M., and Hon, M.H., J. Mater. Sci. 27, 3883 (1992).CrossRefGoogle Scholar
20Minato, K. and Fukuda, K., J. Nucl. Mater. 149, 233 (1987).CrossRefGoogle Scholar
21Gat, E., El Khakani, M. A., Chaker, M., Jean, A., Boily, S., Pépin, H., Kieffer, J. C., Durand, J., Cros, B., Rousseaux, F., and Gujrathi, S., J. Mater. Res. 7, 2478 (1992).CrossRefGoogle Scholar
22Spitzer, W. G., Kleinmann, D. A., and Walsh, D., Phys. Rev. 113, 127 (1959).CrossRefGoogle Scholar
23Spitzer, W. G., Kleinmann, D. A., and Frosch, C. J., Phys. Rev. 113, 133 (1959).CrossRefGoogle Scholar
24Motojima, S. and Hasegawa, M., J. Vac. Sci. Technol. A 8, 3763 (1990).CrossRefGoogle Scholar
25Langlais, F. and Prebende, C., in Proc. 11th Int. Conf. on Chemical Vapor Deposition, edited by Spear, K. E. and Cullen, G. W. (The Electrochem. Soc, Bennington, NJ, 1990), p. 686.Google Scholar
26Fischman, G. S. and Petuskey, W. T., J. Am. Ceram. Soc. 68, 185 (1985).CrossRefGoogle Scholar
27Yoshinobu, T., Mitsui, H., Tarui, Y., Fuyuki, T., and Matsunami, M., J. Appl. Phys. 72, 2006 (1992).CrossRefGoogle Scholar
28Cheng, D. J., Shyy, W. J., Kuo, D. H., and Hon, M. H., J. Electrochem. Soc. 134, 3145 (1987).CrossRefGoogle Scholar
29So, M. G. and Chun, J. S., J. Vac. Sci. Technol. A 6, 5 (1988).CrossRefGoogle Scholar
30Schlichting, J., Powder Metall. Inter. 12, 141 (1980).Google Scholar
31Desu, S. B., J. Am. Ceram. Soc. 72, 1615 (1989).CrossRefGoogle Scholar
32Bird, R. B., Steward, W. E., and Lightfoot, E. N., in Transport Phenomena (John Wiley & Sons, New York, 1960).Google Scholar
33Tsai, C. Y., Desu, S. B., and Chiu, C. C., unpublished research.Google Scholar