Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-20T05:17:36.584Z Has data issue: false hasContentIssue false
  • English
  • Français

Large size plasma generation using multicathode direct current geometry for diamond deposition

Published online by Cambridge University Press:  31 January 2011

Young-Joon Baik ,
Jae-Kap Lee ,
Wook-Seong Lee  and
Kwang Yong Eun
Young-Joon Baik
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130–650, Korea
Jae-Kap Lee
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130–650, Korea
Wook-Seong Lee
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130–650, Korea
Kwang Yong Eun
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130–650, Korea
Get access

Abstract

The deposition area of diamond film is increased by applying a geometry of multiple cathodes and a single anode in direct current (dc) plasma assisted chemical vapor deposition (PACVD). Each cathode is made of Ta and connected independently to its own dc power supply. The operating pressure is 1.3 × 104 Pa (100 Torr), and methane-hydrogen mixed gas is used as reaction gas. The voltage and the current applied to each cathode are 650 V and 4 A, respectively. The transition from a diffuse glow to an arc is prevented by maintaining cathode temperatures above 2000 °C, which inhibits carbon deposition on the cathodes. Translucent diamond film of 3 in. diameter, thicker than 200 μm, is grown using seven cathodes with 3% CH4–H2 mixed gas for 110 h. The deposition area can be increased further by increasing the number of cathodes.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 4 , April 1998 , pp. 944 - 946
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Matsumoto, S., Sato, Y., Tsutsumi, M., and Setaka, N., J. Mater. Sci. 17, 3106 (1982).CrossRefGoogle Scholar
2.Suzuki, K., Sawabe, A., and Inuzuka, T., Jpn. J. Appl. Phys. 29, 153 (1990).CrossRefGoogle Scholar
3.Kurihara, K., Sasaki, K., Kawarada, M., and Koshino, N., Appl. Phys. Lett. 52, 437 (1988).CrossRefGoogle Scholar
4.Nesladek, M., Diamond Relat. Mater. 2, 357 (1993).CrossRefGoogle Scholar
5.Hartmann, P., Haubner, R., and Lux, B., Diamond Relat. Mater. 5, 850 (1996).CrossRefGoogle Scholar
6.Lee, J-K., Lee, W-S., Baik, Y-J., and Eun, K. Y., J. Korean Inst. Met Mater. 32, 742 (1992).Google Scholar
7.Lee, J-K., Baik, Y-J., and Eun, K. Y., Mater. Sci. Eng. A209, 399 (1996).CrossRefGoogle Scholar