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Lanthanide series doping effects in lead zirconate titanate (PLnZT) thin films

Published online by Cambridge University Press:  31 January 2011

Timothy J. Boyle ,
Paul G. Clem ,
Bruce A. Tuttle ,
Geoffrey L. Brennecka ,
Jeffrey T. Dawley ,
Mark A. Rodriguez ,
Timothy D. Dunbar  and
William F. Hammetter
Timothy J. Boyle*
Affiliation:
Sandia National Laboratories, Advanced Materials Laboratory, MS 1349, 1001 University Boulevard, SE, Albuquerque, New Mexico 87105
Paul G. Clem
Affiliation:
Sandia National Laboratories, Integrated Materials Research Laboratory, MS 1411, P.O. Box 5800, Albuquerque, New Mexico 87185
Bruce A. Tuttle
Affiliation:
Sandia National Laboratories, Integrated Materials Research Laboratory, MS 1411, P.O. Box 5800, Albuquerque, New Mexico 87185
Geoffrey L. Brennecka
Affiliation:
University of Missouri—Rolla, Ceramic Engineering Department 222 McNutt Hall, 1870 Miner Circle, Rolla, Missouri 65409
Jeffrey T. Dawley
Affiliation:
Sandia National Laboratories, Integrated Materials Research Laboratory, MS 1411, P.O. Box 5800, Albuquerque, New Mexico 87185
Mark A. Rodriguez
Affiliation:
Sandia National Laboratories, Integrated Materials Research Laboratory, MS 1411, P.O. Box 5800, Albuquerque, New Mexico 87185
Timothy D. Dunbar
Affiliation:
Sandia National Laboratories, Advanced Materials Laboratory, MS 1349, 1001 University Boulevard, SE, Albuquerque, New Mexico 87105
William F. Hammetter
Affiliation:
Sandia National Laboratories, Advanced Materials Laboratory, MS 1349, 1001 University Boulevard, SE, Albuquerque, New Mexico 87105
*
a)Address all correspondence to this author.
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Abstract

Lanthanide (Ln) doping of lead zirconate titanate (PLnZT 4/30/70) thin films was conducted to investigate effects on structural and electrical properties. Films were spin-coat deposited from precursor solutions made using a previously reported “basic route to PZT” chemistry. The remanent polarization (Pr), dielectric constant (ε), dielectric loss (tan δ), and lattice parameter values were obtained for each of the doped PLnZT films. Films doped with amphoteric cations (Tb, Dy, Y, and Ho) displayed high Pr values, square hysteresis loops, and enhanced fatigue resistance. Smaller radius Ln-doped films display an increased tendency toward (100) orientation in otherwise (111)-oriented films.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 4 , April 2002 , pp. 871 - 878
Copyright
Copyright © Materials Research Society 2002

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