Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-26T11:41:36.206Z Has data issue: false hasContentIssue false
  • English
  • Français

Kinetics of interfacial reaction between borosilicate glass and sapphire substrate

Published online by Cambridge University Press:  31 January 2011

Jau-Ho Jean  and
Tapan K. Gupta
Jau-Ho Jean
Affiliation:
Alcoa Electronic Packaging, Inc., Alcoa Center, Pennsylvania 15069
Tapan K. Gupta
Affiliation:
Alcoa Electronic Packaging, Inc., Alcoa Center, Pennsylvania 15069
Get access

Abstract

Reaction kinetics between borosilicate glass (BSG) and sapphire has been studied at temperatures from 850 °C to 950 °C. Microstructural and chemical analyses show that the nonporous interdiffusion layer is formed with Al+3 ion dissolving from sapphire and K+ diffusing from BSG onto the interface of sapphire/BSG, and that both ions are always coupled together in the reaction layer. The interdiffusion layer moves toward BSG with time and the reaction starts immediately at temperatures investigated without incubation period. The growth kinetics for the interdiffusion layer follows a parabolic rate law in the temperature range investigated, and shows an apparent activation energy in the range of 176 k–/mol. The diffusion coefficient of aluminum ion is determined from EDX analysis, and the values range from 0.7–1.4 × 10−12 at 850 °C to 3.0–6.0 × 10−12 cm2/s at 950 °C. The above results also show an activation energy close to that determined from the parabolic growth rate constants, suggesting that the mass-transport kinetics of aluminum ion from sapphire into the interdiffusion layer controls the formation process.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 9 , September 1992 , pp. 2514 - 2520
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Licari, J. J. and Enlow, L. R., Hybrid Microcircuit Technology Handbook (Noyes, Park Ridge, NJ, 1988), Chaps. 2–6.Google Scholar
2.Vest, R. W., Conduction Mechanisms in Thick-;Film Microcircuits, Final Tech. Rept., ARPA Order No. 1642 (1975).CrossRefGoogle Scholar
3.Machin, W. S. and Vest, R. W., Materials Science Research, Vol. 11: Processing of Crystalline Ceramics, edited by Palmour, H., III Davis, R. F., and Hare, T. M. (Plenum Press, New York, 1977), p. 243.Google Scholar
4.Kingery, W. D., Bowen, H. K., and Uhlmann, D. R., Introduction to Ceramics (John Wiley and Sons, New York, 1976), 2nd ed., Chap. 6.Google Scholar
5.Doremus, R. H., Glass Science (John Wiley and Sons, New York, 1973), p. 165.Google Scholar
6.Frischat, G. H., J. Am. Ceram. Soc. 53, 625 (1969).CrossRefGoogle Scholar
7.Frischat, G. H., Ionic Diffusion in Oxide Glasses (Trans. Tech., Bay Village, OH, 1975), p. 42.Google Scholar
8.Doremus, R. H., Glass Science (John Wiley and Sons, New York, 1973), p. 67.Google Scholar
9.Schmalzried, H., Solid State Reactions (Verlag Chemie, Deerfield Beach, FL, 1981), 2nd ed., Chap. 6.Google Scholar
10.Pettit, F. S., Randklev, E. H., and Felten, E. J., J. Am. Ceram. Soc. 49, 199 (1969).CrossRefGoogle Scholar
11.Cooper, A. R., Jr., Trans. Faraday Soc. 58, 2468 (1962).Google Scholar
12.Shewmon, P. G., Diffusion in Solids (McGraw-Hill, New York, 1970), Chap. 1.Google Scholar
13.Frischat, G. H., Ionic Diffusion in Oxide Glasses (Trans. Tech., Bay Village, OH, 1975), p. 147.Google Scholar
14.ibid., p. 138.Google Scholar