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Ion-beam mixing of Ni/Pd layers: II. Thermally assisted regime (>500K)

Published online by Cambridge University Press:  31 January 2011

U. G. Akano ,
D. A. Thompson ,
W. W. Smeltzer  and
J. A. Davies
U. G. Akano
Affiliation:
Department of Engineering Physics and Institute for Materials Research, McMaster University, Hamilton, Ontario L8S4MI, Canada
D. A. Thompson
Affiliation:
Department of Engineering Physics and Institute for Materials Research, McMaster University, Hamilton, Ontario L8S4MI, Canada
W. W. Smeltzer
Affiliation:
Department of Engineering Physics and Institute for Materials Research, McMaster University, Hamilton, Ontario L8S4MI, Canada
J. A. Davies
Affiliation:
Department of Engineering Physics and Institute for Materials Research, McMaster University, Hamilton, Ontario L8S4MI, Canada
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Abstract

Atomic mixing in Ni/Pd bilayer films due to 120 keV Ar+ irradiation in the thermally assisted regime (523−673 K) has been measured, in situ, using Rutherford backscattering with 2.0 MeV 4He+ ions. The mean diameter of grains in these polycrystallinc films increased from 10 to 60 nm, following Ar+ bombardment at 573 K. Initial mixing was rapid due to grain boundary diffusion and incorporation of the metal solute into the solvent metal matrix by grain growth; this mixing stage was essentially complete within 10 min for annealed films or after an Ar+ dose of 4 × 1015 cm−2 in irradiated films (10 min irradiation). No further measurable mixing occurred in the annealed, unirradiated films. For the irradiated samples the initial rapid mixing (6−35 atoms/ion) was followed by a slower mixing stage of 0.7–1.8 atoms/ion for irradiation doses of up to 2.5 × 1016 Ar+ cm−2. The Ar+ bombardment gave rise to much smaller mixing levels when the Pd films were deposited on large-grain or single-crystal Ni. A diffusion analysis demonstrates that the effective diffusivity, Deff, for ion-irradiation-enhanced mixing in the thermally assisted regime satisfied the relation Dl < Deff < DB, where the ratio of the grain boundary to lattice diffusivity was DB/Dl > 106.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 6 , December 1988 , pp. 1063 - 1071
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1Akano, U. G., Thompson, D. A., Davies, J. A., and Smeltzer, W. W., J. Mater. Res. 3, 1057 (1988).CrossRefGoogle Scholar
2Wang, P., Thompson, D. A., and Smeltzer, W. W., Nucl. Instrum. Methods B 7/8, 97 (1985); J C. Liu and J. W. Mayer, Nucl. Instrum. Methods 19/20, 538 (1987).CrossRefGoogle Scholar
3Liu, J. C., Nastasi, M., and Mayer, J. W., J. Appl. Phys. 63, 423 (1987).CrossRefGoogle Scholar
4Atwater, H. A., Thompson, C. V., and Smith, H. I., Phys. Rev. Lett. 60, 112 (1988).CrossRefGoogle Scholar
5Chen, C. W., Phys. Status Solidi 16, 197 (1973).CrossRefGoogle Scholar
6Norris, D. I. R., Philos. Mag. 19, 653 (1969).CrossRefGoogle Scholar
7Al-Tamimi, Z. Y., Grant, W. A., Carter, G., Stevanovic, D. V., and Thompson, D. A., Nucl. Instrum. Methods B 7/8, 124 (1985).CrossRefGoogle Scholar
8Crank, J., The Mathematics of Diffusion (Oxford U.P., London, 1970), p. 13.Google Scholar
9Claire, A. D. Le, Brit. J. Appl. Phys. 14, 351 (1963).CrossRefGoogle Scholar
10Holloway, H. H., Amos, D. E., and Nelson, G. C., J. Appl. Phys. 14, 3769 (1976).CrossRefGoogle Scholar
11Baglin, J. E. E. and Poate, J. M., in Thin Films—Interdiffusion and Reactions (Wiley-Interscience, New York, 1978), p. 305.Google Scholar
12Borovskii, I. B., Diffusion Data 1, 31 (1967).Google Scholar