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Ion-assisted pulsed laser deposition of cubic BN films on Si (001) substrates

Published online by Cambridge University Press:  31 January 2011

A.K. Ballal ,
L. Salamanca-Riba ,
G.L. Doll ,
C.A. Taylor II  and
R. Clarke
A.K. Ballal
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, Maryland 20742-2115
L. Salamanca-Riba
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, Maryland 20742-2115
G.L. Doll
Affiliation:
Physics Department, General Motors Research Laboratories, Warren, Michigan 48090-9055
C.A. Taylor II
Affiliation:
Randall Laboratory of Physics, University of Michigan, Ann Arbor, Michigan 48109-1120
R. Clarke
Affiliation:
Randall Laboratory of Physics, University of Michigan, Ann Arbor, Michigan 48109-1120
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Abstract

We report on oriented and adherent cubic BN films grown on (001) faces of silicon using the method of ion-assisted pulsed laser deposition. The structure of the films is cubic zinc-blende with a lattice constant of 3.62 Å, as determined by infrared absorption and transmission electron microscopy. The films were found to be polycrystalline, and oriented with the cubic BN [110] axis parallel to the Si [001] direction.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 7 , Issue 7 , July 1992 , pp. 1618 - 1620
Copyright
Copyright © Materials Research Society 1992

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