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Ion beam sputter deposition of YBa2Cu3O7−δ thin films

Published online by Cambridge University Press:  03 March 2011

B.J. Kellett  and
J.H. James
B.J. Kellett*
Affiliation:
Department of Materials Science and Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0012
J.H. James
Affiliation:
Oxford Instruments, Research Instruments, Units 4&5 Orwell Furlong, Cambridge, CB4 4WY, United Kingdom
*
a)Address correspondence to this author.
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Abstract

This article addresses issues associated with in situ growth of superconducting YBa2Cu3O7−δ thin films by ion beam sputtering. High oxygen partial pressure during ion beam deposition can cause significant beam broadening and oxidation of filaments and grids. Also, many of the targets used for processing YBCO are unstable when sputtered in a high oxygen partial pressure. It is shown that ion beam sputtering can produce YBCO films of comparable quality to those produced by laser ablation or dc magnetron sputtering. Typical film properties are Tco = 91 K and Jc (77 K) = 106 A cm−2. It appears that the oxygen gas pressure during the postdeposition cooldown has a more important influence on film properties than the oxygen partial pressure during deposition.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 12 , December 1993 , pp. 3032 - 3042
Copyright
Copyright © Materials Research Society 1993

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