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Intrinsic point defects in ternary MgCaSi: Ab initio investigation

Published online by Cambridge University Press:  01 August 2017

Ya-Ping Wang ,
Yan Yang ,
Xiao-Jing Yao ,
Hai-Chen Wang  and
Bi-Yu Tang
Ya-Ping Wang
Affiliation:
School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China
Yan Yang
Affiliation:
School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China
Xiao-Jing Yao
Affiliation:
School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China
Hai-Chen Wang
Affiliation:
School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China
Bi-Yu Tang*
Affiliation:
School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Nine possible native point defects in MgCaSi have been studied by employing density functional theory based ab initio calculations. The complex chemical potential limits are first determined using a two-dimension (∆μMg, ∆μCa) diagram, then the defect formation energies as a function of the atomic chemical potential are gained. The energetic results show that under Mg-rich conditions, the most favorable defect is MgCa rather than MgSi, while CaMg is predominant compared to CaSi under Ca-rich conditions. The bonding energy is first introduced to uncover the intrinsic feature of defect formation energy. The local geometric distortion around CaMg, MgSi, and CaSi antisite defects gradually increases due to the smaller atomic radii from Ca to Mg and Si, showing the important role of the geometrical mismatch. The density of states indicates that the higher stability of CaMg and MgCa originates from the smaller deviation of the Fermi level from the pseudo-gap.

Keywords

defectsalloyelectronic structure
Type
Articles
Information
Journal of Materials Research , Volume 32 , Issue 19 , 16 October 2017 , pp. 3723 - 3731
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Copyright
Copyright © Materials Research Society 2017 

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Footnotes

Contributing Editor: Susan B. Sinnott

References

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