Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-23T13:21:52.292Z Has data issue: false hasContentIssue false

Interfacial stability of eutectic SnPb solder and composite 60Pb40Sn solder on Cu/Ni(V)/Ti under-bump metallization

Published online by Cambridge University Press:  03 March 2011

Albert T. Wu*
Affiliation:
Institute of Materials Science and Engineering, National Taipei University of Technology, Taipei City 106, Taiwan, Republic of China; and Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei City 106, Taiwan, Republic of China
F. Hua
Affiliation:
Intel Corp., Santa Clara, California 95052
*
a) Address all correspondence to this author. e-mail: [email protected] This experiment was conducted at Intel Corp. and a United States patent has been filed.
Get access

Abstract

Eutectic SnPb solder has been widely used in packaging for several decades. The stability of the interface between solder and under-bump metallization (UBM) is an important issue that has led to many studies. Even though Ni atoms dissolve much slower into SnPb solder than Cu, the intermetallic compound, Ni3Sn4, which forms when eutectic SnPb solder reacts with Ni(V)/Ti UBM, is not stable on Ti layer, creates V-rich zone, and causes spalling. To prevent the phenomenon, and the resulting reduction of mechanical reliability in solder joints, we propose the addition of a layer of Cu thin film to serve as a sacrificial layer. Both eutectic SnPb solder and composite solder (high-Pb solder with eutectic SnPb solder) were studied in severe reflow conditions to simulate the worst case of die attach and later reflow process. Cu film first was consumed completely to form a compound. Due to lower interfacial energy between Cu6Sn5 and Ni(V), the interface was stable and no spalling occurred. However, the same thickness of Cu was insufficient to prevent Ni from diffusing into solder or compound. Not only diffusion of Ni atoms was observed; Sn atoms also diffused into the Ni(V) layer. The Sn–Ni reaction caused the interface between the compound and Ni(V) to retreat into the Ni(V) layer. The compound was not stable at the interface, and spalling could be seen. Due to the interdiffusion of Ni and Sn, many Kirkendall voids were also observed at both side of the interface.

Type
Articles
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1International Roadmap for Semiconductor Technology (Semiconductor Industry Association, San Jose, CA, 1999).Google Scholar
2Tummala, R.R. and Rymaszewski, E.J.: Microelectronics Packaging Handbook (Van Nostrand Reinhold, New York, 1989).Google Scholar
3Chang, C.S., Oscilowski, A., and Bracken, R.C.: Future challenges in electronics packaging. IEEE Circuits Devices Mag. 14, 45 (1998).CrossRefGoogle Scholar
4Vianco, P.T. and Frear, D.R.: Issues in the replacement of lead bearing solders. J. Met. 45, 14 (1993).Google Scholar
5Kim, H.K. and Tu, K.N.: Kinetic analysis of the soldering reaction between eutectic SnPb alloy and Cu accompanied by ripening. Phys. Rev. B 53, 16027 (1996).CrossRefGoogle ScholarPubMed
6Kim, H.K., Tu, K.N., and Totta, P.A.: Ripening-assisted asymmetric spalling of Cu-Sn compound spheroids in solder joints on Si wafers. Appl. Phys. Lett. 68, 2204 (1996).CrossRefGoogle Scholar
7Wang, X.H. and Conrad, H.: Effect of Sn content of Pb-Sn solder alloys on wetting dynamics. Scr. Metall. Mater. 31, 375 (1994).CrossRefGoogle Scholar
8Mei, Z. and Morris, J.W. Jr.: Characterization of eutectic Sn-Bi solder joints. J. Electron. Mater. 21, 599 (1992).CrossRefGoogle Scholar
9Wu, Y.J., Sees, J.A., Pouraghabagher, C., Foster, L.A., Marshall, J.L., Jacobs, E.G., and Pinizzotto, R.F.: The formation and growth of intermetallics in composite solder. J. Electron. Mater. 22, 69 (1993).CrossRefGoogle Scholar
10Huang, C.S., Jang, G.Y., and Duh, J.G.: Soldering-induced Cu diffusion and intermetallic compound formation between Ni/Cu under bump metallization and SnPb flip-chip solder bumps. J. Electron. Mater. 33, 283 (2004).CrossRefGoogle Scholar
11Hansen, M.: Constitution of Binary Alloys (McGraw-Hill, New York, 1958), p. 610.Google Scholar
12Tu, K.N. and Thompson, R.D.: Kinetics of interfacial reaction in bimetallic Cu–Sn thin films. Acta Metall. 30, 947 (1982).CrossRefGoogle Scholar
13Liu, C.Y., Tu, K.N., Sheng, T.T., Tung, C.H., Frear, D.R., and Elenius, P.: Electron microscopy study of interfacial reaction between eutectic SnPb and Cu/Ni(V)/Al thin film metallization. J. Appl. Phys. 87, 750 (2000).CrossRefGoogle Scholar
14Taguma, Y., Uda, T., Ishida, H., Kobayashi, T., and Nakada, K.: Application of dc magnetron sputtered Cr–Cu–Au thin film for flip-chip solder terminal contacts, International Electronic Packaging Conference, Vol. 1 (International Electronic Packaging Society, Wheaton, IL, 1991), p. 619.Google Scholar
15Pan, G.Z., Liu, A.A., Kim, H.K., Tu, K.N., and Totta, P.A.: Microstructures of phased-in Cr–Cu/Cu/Au bump-limiting metallization and its soldering behavior with high Pb content and eutectic PbSn solders. Appl. Phys. Lett. 71, 2946 (1997).CrossRefGoogle Scholar
16Shukla, R., Murali, V., and Bhansaliw, A.: Flip chip CPU package technology at Intel: A technology and manufacturing overview, Proceedings of IEEE Electronic Compounds and Technology Conference (IEEE, San Diego, CA, 1999), p. 945.Google Scholar
17Kim, P.G., Jang, J.W., Lee, T.Y., and Tu, K.N.: Interfacial reaction and wetting behavior in eutectic SnPb solder on Ni/Ti thin films and Ni foils. J. Appl. Phys. 86, 6746 (1999).CrossRefGoogle Scholar
18Tu, K.N. and Zeng, K.: Tin-lead (SnPb) solder reaction in flip chip technology. Mater. Sci. Eng. 34, 1 (2001).CrossRefGoogle Scholar
19Liu, A.A., Kim, H.K., Tu, K.N., and Totta, P.A.: Spalling of Cu6Sn5 spheroids in the soldering reaction of eutectic SnPb on Cr/Cu/Au thin films. J. Appl. Phys. 80, 2774 (1996).CrossRefGoogle Scholar
20Sohn, Y.C., Jin, Yu., Kang, S.K., Shih, D.Y., and Lee, T.Y.: Spalling of intermetallic compounds during the reaction between lead-free solders and electroless Ni-P metallization. J. Mater. Res. 19, 2428 (2004).CrossRefGoogle Scholar
21Jang, J.W., Ramanathan, L.N., Lin, J.K., and Frear, D.R.: Spalling of Cu3Sn intermetallics in high-lead 95Pb5Sn solder bumps on Cu under bump metallization during solid-state annealing. J. Appl. Phys. 95, 8286 (2004).CrossRefGoogle Scholar
22Hsiao, L.Y. and Duh, J.G.: Characterizing metallurgical reaction of Sn–Pb solder with Ni/Cu under-bump metallization by electron microscopy. Thin Solid Films 469, 366 (2004).CrossRefGoogle Scholar
23Jang, G.Y., Huang, C.S., Hsiao, L.Y., Duh, J-G., and Takahashi, H.: Mechanism of interfacial reaction for the Sn-Pb solder bump with Ni/Cu under-bump metallization in flip-chip technology. J. Electron. Mater. 33, 1118 (2004).CrossRefGoogle Scholar
24Zhang, F., Li, M., Chum, C.C., and Shao, Z.C.: Effects of substrate metallization on solder/under-bump metallization interfacial reactions in flip-chip packages during multiple reflow cycles. J. Electron. Mater. 32, 123 (2003).CrossRefGoogle Scholar
25Zeng, K., Stiermand, R., Chiu, T.C., Edwards, D., Ano, K., and Tu, K.N.: Kirkendall void formation in eutectic SnPb solder joints on bare Cu and its effect on joint reliability. J. Appl. Phys. 97, 024508 (2005).CrossRefGoogle Scholar
26Li, D., Liu, C., and Paul, P.: Conway, Characteristics of intermetallics and micromechanical properties during thermal ageing of Sn–Ag–Cu flip-chip solder interconnects. Mater. Sci. Eng., A. 391, 95 (2005).CrossRefGoogle Scholar
27He, M., Chen, Z., and Qi, G.: Solid state interfacial reaction of Sn–37Pb and Sn–3.5Ag solders with Ni–P under bump metallization. Acta Mater. 52, 2047 (2004).CrossRefGoogle Scholar
28Jeon, Y.D., Paik, K.W., Bok, K.S., Choi, W.S., and Cho, C.L.: Studies of electroless nickel under bump metallurgy—solder interfacial reactions and their effects on flip chip solder joint reliability. J. Electron. Mater. 31, 520 (2002).CrossRefGoogle Scholar