Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-23T12:21:17.484Z Has data issue: false hasContentIssue false

Interfacial reaction-induced morphological instabilities in thin Al/Pt and Al/Pd films

Published online by Cambridge University Press:  31 January 2011

E. G. Colgan
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
C.-Y. Li
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
Get access

Abstract

Aluminum films 1–6 kÅ thick deposited on Pt or Pd layers developed voids after annealing between 200 and 275°C. Void formation was also observed when the Pt layer was deposited above the Al film. The amount of Al surrounding the voids increased as the voids grew. The rate of void growth decreased as the thickness of the initial Al film increased. The driving force appears to be surface tension. The controlling mechanism is diffusion along the Al/Pt or Al/Pd interface made possible by compound formation there.

Type
Articles
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Revesz, P., Zheng, L. R., Hung, L. S., and Mayer, J. W., Appl. Phys. Lett. 48, 1591 (1986).CrossRefGoogle Scholar
2Santoro, C. J., J. Electrochem. Soc. 116, 361 (1969).CrossRefGoogle Scholar
3Yushin, V. D., Logvinov, A. N., Chempinskiy, L. A., and Shakhnistov, V. M., Fiz. Met. Metalloved. 41, 666 (1976).Google Scholar
4Murarka, S. P., Blech, I. A., and Levinstein, H. J., J. Appl. Phys. 47, 5175 (1976).CrossRefGoogle Scholar
5Colgan, E. G., J. Appl. Phys. (to be published).Google Scholar
6Colgan, E. G., J. Appl. Phys. (to be published).Google Scholar
7Doolittle, L. R., Nucl. Inst. Meth. B 9, 344 (1985).CrossRefGoogle Scholar
8The stopping power data came from Ziegler, J. F., Biersack, J. P., and Littmack, U., IBM Research Report No. RC9250, 1982.Google Scholar
9Shewmon, P. G., Diffusion in Solids (McGraw-Hill, New York, 1962), Chap. 6–5.Google Scholar
10Smithells Metals Reference Book, edited by Brandes, E. A. (Butterworths, London, 1983), 6th ed., pp. 1394.Google Scholar