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Infrared luminescence properties of bismuth-doped barium silicate glasses

Published online by Cambridge University Press:  31 January 2011

Jinjun Ren
Affiliation:
State Key Laboratory for High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People’s Republic of China; and Graduate School of the Chinese Academy of Sciences, Beijing 100080, People’s Republic of China
Jianrong Qiu*
Affiliation:
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China
Danping Chen
Affiliation:
State Key Laboratory for High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People’s Republic of China
Chen Wang
Affiliation:
State Key Laboratory for High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People’s Republic of China; and Graduate School of the Chinese Academy of Sciences, Beijing 100080, People’s Republic of China
Xiongwei Jiang
Affiliation:
State Key Laboratory for High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People’s Republic of China
Congshan Zhu
Affiliation:
State Key Laboratory for High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Infrared (IR) luminescence covering 1.1 to ∼1.6 μm wavelength region was observed from bismuth-doped barium silicate glasses, excited by a laser diode at 808 nm wavelength region, at room temperature. The peak of the IR luminescence appears at 1325 nm. A full width half-maximum (FWHM) and the lifetime of the fluorescence is more than 200 nm and 400 μs, respectively. The fluorescence intensity increases with Al2O3 content, but decreases with BaO content. We suggest that the IR luminescence should be ascribed to the low valence state of bismuth Bi2+ or Bi+, and Al3+ ions play an indirect dispersing role for the infrared luminescent centers.

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Articles
Copyright
Copyright © Materials Research Society 2007

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References

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