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Influence of top electrode on resistive switching effect of chitosan thin films

Published online by Cambridge University Press:  16 December 2019

Kim My Tran ,
Dinh Phuc Do ,
Kieu Hanh Ta Thi  and
Ngoc Kim Pham Open the ORCID record for Ngoc Kim Pham [Opens in a new window]
Kim My Tran
Affiliation:
Faculty of Materials Science and Technology, University of Science, Vietnam National University, Ho Chi Minh 70000, Vietnam
Dinh Phuc Do
Affiliation:
Faculty of Materials Science and Technology, University of Science, Vietnam National University, Ho Chi Minh 70000, Vietnam
Kieu Hanh Ta Thi
Affiliation:
Faculty of Materials Science and Technology, University of Science, Vietnam National University, Ho Chi Minh 70000, Vietnam
Ngoc Kim Pham*
Affiliation:
Faculty of Materials Science and Technology, University of Science, Vietnam National University, Ho Chi Minh 70000, Vietnam
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Chitosan has attracted significant attention in the past decade because of its potential applications in water engineering, the food and nutrition technology, the textile and paper industries, and drug delivery. Recently, a particularly interesting application of chitosan has been proposed in transparent flexible electronic devices, including memristors and transistors. In this work, the resistive switching (RS) effect of chitosan thin films in a capacitor-like structure with Ag and Al as alternative top electrodes was studied. Both the devices showed a bistable RS effect under an external electric field with a high endurance of 102. The electrical conduction and RS mechanisms of chitosan-based devices were investigated. The trap-controlled space charge–limited current was responsible for electrical transport at the low-resistance state of both devices, while direct tunneling and Schottky emission at the high-resistance state were related to Ag/chitosan/fluorine-doped tin oxide (FTO) and Al/chitosan/FTO, respectively. The RS mechanism of the Ag/chitosan/FTO device was attributed to the formation and dissociation of Ag filaments through the dielectric layer, whereas the change in the barrier height at the Al and chitosan interface under an external electric field could control the RS mechanism of the Al/chitosan/FTO device.

Keywords

chitosanresistive switchingconduction mechanismfilamentinterface
Type
Article
Information
Journal of Materials Research , Volume 34 , Issue 23 , 16 December 2019 , pp. 3899 - 3906
Copyright
Copyright © Materials Research Society 2019 

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