Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-23T11:37:07.641Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of top electrode on resistive switching effect of chitosan thin films

Published online by Cambridge University Press:  16 December 2019

Kim My Tran ,
Dinh Phuc Do ,
Kieu Hanh Ta Thi  and
Ngoc Kim Pham Open the ORCID record for Ngoc Kim Pham [Opens in a new window]
Kim My Tran
Affiliation:
Faculty of Materials Science and Technology, University of Science, Vietnam National University, Ho Chi Minh 70000, Vietnam
Dinh Phuc Do
Affiliation:
Faculty of Materials Science and Technology, University of Science, Vietnam National University, Ho Chi Minh 70000, Vietnam
Kieu Hanh Ta Thi
Affiliation:
Faculty of Materials Science and Technology, University of Science, Vietnam National University, Ho Chi Minh 70000, Vietnam
Ngoc Kim Pham*
Affiliation:
Faculty of Materials Science and Technology, University of Science, Vietnam National University, Ho Chi Minh 70000, Vietnam
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

Chitosan has attracted significant attention in the past decade because of its potential applications in water engineering, the food and nutrition technology, the textile and paper industries, and drug delivery. Recently, a particularly interesting application of chitosan has been proposed in transparent flexible electronic devices, including memristors and transistors. In this work, the resistive switching (RS) effect of chitosan thin films in a capacitor-like structure with Ag and Al as alternative top electrodes was studied. Both the devices showed a bistable RS effect under an external electric field with a high endurance of 102. The electrical conduction and RS mechanisms of chitosan-based devices were investigated. The trap-controlled space charge–limited current was responsible for electrical transport at the low-resistance state of both devices, while direct tunneling and Schottky emission at the high-resistance state were related to Ag/chitosan/fluorine-doped tin oxide (FTO) and Al/chitosan/FTO, respectively. The RS mechanism of the Ag/chitosan/FTO device was attributed to the formation and dissociation of Ag filaments through the dielectric layer, whereas the change in the barrier height at the Al and chitosan interface under an external electric field could control the RS mechanism of the Al/chitosan/FTO device.

Keywords

chitosanresistive switchingconduction mechanismfilamentinterface
Type
Article
Information
Journal of Materials Research , Volume 34 , Issue 23 , 16 December 2019 , pp. 3899 - 3906
Copyright
Copyright © Materials Research Society 2019 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Strukov, D.B. and Kohlstedt, H.: Resistive switching phenomena in thin films: Materials, devices, and applications. MRS Bull. 37, 108 (2012).CrossRefGoogle Scholar
Qian, K., Nguyen, V.C., Chen, T., and Lee, P.S.: Novel concepts in functional resistive switching memories. J. Mater. Chem. C 4, 9637 (2016).CrossRefGoogle Scholar
Chang, T.C., Chang, K.C., Tsai, T.M., Chu, T.J., and Sze, S.M.: Resistance random access memory. Mater. Today 19, 254 (2016).CrossRefGoogle Scholar
Hosseini, N.R. and Lee, J.S.: Biocompatible and flexible chitosan-based resistive switching memory with magnesium electrodes. Adv. Funct. Mater. 25, 5586 (2015).CrossRefGoogle Scholar
Lee, B.H., Bae, H., Seong, H., Il Lee, D., Park, H., Choi, Y.J., Im, S.G., Kim, S.O., and Choi, Y.K.: Direct observation of a carbon filament in water-resistant organic memory. ACS Nano 9, 7306 (2015).CrossRefGoogle ScholarPubMed
Silva, S.M.L., Braga, C.R.C., Fook, M.V.L., Raposo, C.M.O., Carvalho, L.H., and Canedo, E.L.: Infrared Spectroscopy Materials Science, Engineering and Technology (IntechOpen, London, 2012); pp. 43–62.Google Scholar
Raeis-Hosseini, N. and Lee, J-S.: Resistive switching memory using biomaterials. J. Electroceram. 39, 223 (2017).CrossRefGoogle Scholar
Raeis-Hosseini, N. and Lee, J.S.: Controlling the resistive switching behavior in starch-based flexible biomemristors. ACS Appl. Mater. Interfaces 8, 7326 (2016).CrossRefGoogle ScholarPubMed
Raeis Hosseini, N. and Lee, J-S.: Resistive switching memory based on bioinspired natural solid polymer electrolytes. ACS Nano 9, 419 (2015).CrossRefGoogle ScholarPubMed
Zhu, L.Q., Chao, J.Y., Xiao, H., Liu, R., and Wan, Q.: Chitosan-based electrolyte gated low voltage oxide transistor with a coplanar modulatory terminal. IEEE Electron Device Lett. 38, 322 (2017).CrossRefGoogle Scholar
Morgado, J., Pereira, A.T., Bragança, A.M., Ferreira, Q., and Fernandes, S.C.M.: Self-standing chitosan films as dielectrics in organic thin-film transistors. eXPRESS Polym. Lett. 7, 960 (2013).CrossRefGoogle Scholar
Shao, F., Wan, X., Yang, Y., Du, P., and Feng, P.: Optimization of chitosan gated electric double layer transistors by combining nanoparticle incorporation and acid doping. RSC Adv. 6, 109803 (2016).CrossRefGoogle Scholar
Farshi Azhar, F., Olad, A., and Salehi, R.: Fabrication and characterization of chitosan–gelatin/nanohydroxyapatite–polyaniline composite with potential application in tissue engineering scaffolds. Des. Monomers Polym. 17, 654 (2014).CrossRefGoogle Scholar
Ray, M., Pal, K., Anis, A., and Banthia, A.K.: Development and characterization of chitosan-based polymeric hydrogel membranes. Des. Monomers Polym. 13, 193 (2010).CrossRefGoogle Scholar
Kumirska, J., Czerwicka, M., Kaczyński, Z., Bychowska, A., Brzozowski, K., Thöming, J., and Stepnowski, P.: Application of spectroscopic methods for structural analysis of chitin and chitosan. Mar. Drugs 8, 1567 (2010).CrossRefGoogle ScholarPubMed
Rumengan, I.F.M., Suryanto, E., Modaso, R., Wullur, S., Tallei, T.E., and Limbong, D.: Structural characteristics of chitin and chitosan isolated from the biomass of cultivated rotifer, Brachionus rotundiformis. Int. J. Fish. Aquat. Sci. 3, 12 (2014).Google Scholar
Dimzon, I.K.D. and Knepper, T.P.: Degree of deacetylation of chitosan by infrared spectroscopy and partial least squares. Int. J. Biol. Macromol. 72, 939 (2015).CrossRefGoogle ScholarPubMed
Adlim, A. and Bakar, M.A.: Preparation of chitosan–gold nanoparticles: Part 2. The role of chitosan. Indones. J. Chem. 8, 320 (2008).CrossRefGoogle Scholar
Lin, W.P., Liu, S.J., Gong, T., Zhao, Q., and Huang, W.: Polymer-based resistive memory materials and devices. Adv. Mater. 26, 570 (2014).CrossRefGoogle ScholarPubMed
Chiu, F-C.: A review on conduction mechanisms in dielectric films. Adv. Mater. Sci. Eng. 2014, 1–18 (2014).CrossRefGoogle Scholar
Lim, E.W. and Ismail, R.: Conduction mechanism of valence change resistive switching memory: A survey. Electron. 4, 586 (2015).CrossRefGoogle Scholar
Zhou, G.D., Lu, Z.S., Yao, Y.Q., Wang, G., Yang, X.D., Zhou, A.K., Li, P., Ding, B.F., and Song, Q.L.: Mechanism for bipolar resistive switching memory behaviors of a self-assembled three-dimensional MoS2 microsphere composed active layer. J. Appl. Phys. 121, 155302 (2017).CrossRefGoogle Scholar
Lin, Q., Hao, S., Hu, W., Wang, M., Zang, Z., Zhu, L., Du, J., and Tang, X.: Human hair keratin for physically transient resistive switching memory devices. J. Mater. Chem. C 7, 3315 (2019).CrossRefGoogle Scholar
Prakash, R., Sharma, S., Kumar, A., and Kaur, D.: Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode. Curr. Appl. Phys. 19, 260 (2019).CrossRefGoogle Scholar
Han, J.S., Van Le, Q., Choi, J., Hong, K., Moon, C.W., Kim, T.L., Kim, H., Kim, S.Y., and Jang, H.W.: Air-stable cesium lead iodide perovskite for ultra-low operating voltage resistive switching. Adv. Funct. Mater. 28, 1705783 (2018).CrossRefGoogle Scholar
Kumatani, A., Li, Y., Darmawan, P., Minari, T., and Tsukagoshi, K.: On practical charge injection at the metal/organic semiconductor interface. Sci. Rep. 3, 1026 (2013).CrossRefGoogle ScholarPubMed
Hölzl, J. and Schulte, F.K.: Solid Surface Physics (Springer, Berlin, Heidelberg, 1979); pp. 1–150.CrossRefGoogle Scholar
Ray Chowdhuri, A., Tripathy, S., Haldar, C., Roy, S., and Sahu, S.K.: Single step synthesis of carbon dot embedded chitosan nanoparticles for cell imaging and hydrophobic drug delivery. J. Mater. Chem. B 3, 9122 (2015).CrossRefGoogle Scholar
Scott, J.C.: Metal–organic interface and charge injection in organic electronic devices. J. Vac. Sci. Technol., A 21, 521 (2003).CrossRefGoogle Scholar