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The influence of mixed phases on optical properties of HfO2 thin films prepared by thermal oxidation

Published online by Cambridge University Press:  14 January 2011

Yizhu Xie ,
Ziwei Ma ,
Yuroug Su ,
Yanxia Liu ,
Lixin Liu ,
Haiting Zhao ,
Jinyuan Zhou ,
Zhenxing Zhang ,
Jian Li  and
Erqing Xie
Yizhu Xie
Affiliation:
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, Gansu, People’s Republic of China
Ziwei Ma
Affiliation:
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, Gansu, People’s Republic of China
Yuroug Su
Affiliation:
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, Gansu, People’s Republic of China
Yanxia Liu
Affiliation:
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, Gansu, People’s Republic of China
Lixin Liu
Affiliation:
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, Gansu, People’s Republic of China
Haiting Zhao
Affiliation:
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, Gansu, People’s Republic of China
Jinyuan Zhou
Affiliation:
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, Gansu, People’s Republic of China
Zhenxing Zhang
Affiliation:
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, Gansu, People’s Republic of China
Jian Li
Affiliation:
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, Gansu, People’s Republic of China
Erqing Xie*
Affiliation:
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, Gansu, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Hafnium dioxide (HfO2) thin films were synthesized on silicon and quartz substrates by thermal oxidation of metallic hafnium films in oxygen. The crystalline structure and optical properties of the HfO2 films were systematically investigated using x-ray diffraction, ultraviolet (UV)-Raman, and UV-visible spectrophotometer techniques. All the films thermally oxidized at 450 to 800 °C were mostly monoclinic. Interestingly, cubic phase coexisted with monoclinic phase in the films thermally oxidized at 500 to 600 °C. The corresponding optical band gap (Eg) varied from 5.92 to 6.08 eV for the films with a different phase ratio (cubic to monoclinic one) ranging between 0 and 1:3. These results imply that the mixed phase could have a certain effect on the increase of the Eg of HfO2 films.

Keywords

AnnealingPhase TransformationOptical
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 1 , 14 January 2011 , pp. 50 - 54
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1.Tan, Y-N., Chim, W-K., Cho, B.J., and Choi, W-K.: Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layer. IEEE Trans. Electron. Dev. 51(7), 5 (2004).CrossRefGoogle Scholar
2.Buckley, J., De Salvo, B., Ghibaudo, G., Gely, M., Damlencourt, J.F., Martin, F., Nicotra, G., and Deleonibus, S.: Investigation of SiO2/HfO2 gate stacks for application to non-volatile memory devices. Solid-State Electron. 49(11), 1833 (2005).CrossRefGoogle Scholar
3.Goncalves, R.R., Carturan, G., Montagna, M., Ferrari, M., Zampedri, L., Pelli, S., Righini, G.C., Ribeiro, S.J.L., and Messaddeq, Y.: Erbium-activated HfO2-based waveguides for photonics. Opt. Mater. 25(2), 131 (2004).CrossRefGoogle Scholar
4.Afify, N.D., Dalba, G., Armellini, C., Ferrari, M., Rocca, F., and Kuzmin, A.: Local structure around Er3+ in SiO2–HfO2 glassy waveguides using EXAFS. Phys. Rev. B 76, 024114 (2007).CrossRefGoogle Scholar
5.Lange, S., Kiisk, V., Reedo, V., Kirm, M., Aarik, J., and Sildos, I.: Luminescence of RE-ions in HfO2 thin films and some possible applications. Opt. Mater. 28(11), 1238 (2006).CrossRefGoogle Scholar
6.Wilk, G.D., Wallace, R.M., and Anthony, J.M.: High-kappa gate dielectrics: Current status and materials properties considerations. J. Appl. Phys. 89(10), 5243 (2001).CrossRefGoogle Scholar
7.Houssa, M., Pantisano, L., Ragnarsson, L.A., Degraeve, R., Schram, T., Pourtois, G., De Gendt, S., Groeseneken, G., and Heyns, M.M.: Electrical properties of high-kappa gate dielectrics: Challenges, current issues, and possible solutions. Mater. Sci. Eng., Rep. 51(4–6), 37 (2006).CrossRefGoogle Scholar
8.Liu, Z.S., Tibuleac, S., Shin, D., Young, P.P., and Magnusson, R.: High-efficiency guided-mode resonance filter. Opt. Lett. 23(19), 1556 (1998).CrossRefGoogle ScholarPubMed
9.Torchio, P., Gatto, A., Alvisi, M., Albrand, G., Kaiser, N., and Amra, C.: High-reflectivity HfO2/SiO2 ultraviolet mirrors. Appl. Opt. 41(16), 3256 (2002).CrossRefGoogle ScholarPubMed
10.Yuan, L., Zhao, Y.N., Shang, G.Q., Wang, C.R., He, H.B., Shao, J.D., and Fan, Z.X.: Comparison of femtosecond and nanosecond laser-induced damage in HfO2 single-layer film and HfO2–SiO2 high reflector. J. Opt. Soc. Am. B 24(3), 538 (2007).CrossRefGoogle Scholar
11.Khoshman, J.M., Khan, A., and Kordesch, M.E.: Amorphous hafnium oxide thin films for antireflection optical coatings. Surf. Coat. Technol. 202(11), 2500 (2008).CrossRefGoogle Scholar
12.Modreanu, M., Sancho-Parramon, J., Durand, O., Servet, B., Stchakovsky, M., Eypert, C., Naudin, C., Knowles, A., Bridou, F., and Ravet, M.F.: Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films. Appl. Surf. Sci. 253(1), 328 (2006).CrossRefGoogle Scholar
13.Luo, X., Demkov, A.A., Triyoso, D., Fejes, P., Gregory, R., and Zollner, S.: Combined experimental and theoretical study of thin hafnia films. Phys. Rev. B 78, 245314 (2008).CrossRefGoogle Scholar
14.Zhao, X.Y. and Vanderbilt, D.: First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide. Phys. Rev. B 65(23), 233106 (2002).CrossRefGoogle Scholar
15.Jayaraman, A., Wang, S.Y., Sharma, S.K., and Ming, L.C.: Pressure-induced phase-transformations in HfO2 to 50 GPa studied by Raman-spectroscopy. Phys. Rev. B 48(13), 9205 (1993).CrossRefGoogle ScholarPubMed
16.Tyagi, P. and Vedeshwar, A.G.: Effect of residual stress on the optical properties of CdI2 films. Phys. Rev. B 66, 075422 (2002).CrossRefGoogle Scholar
17.Aarik, J., Mandar, H., Kirm, M., and Pung, L.: Optical characterization of HfO2 thin films grown by atomic layer deposition. Thin Solid Films 466(1–2), 41 (2004).CrossRefGoogle Scholar
18.He, G., Zhu, L.Q., Liu, M., Fang, Q., and Zhang, L.D.: Optical and electrical properties of plasma-oxidation derived HfO2 gate dielectric films. Appl. Surf. Sci. 253(7), 3413 (2007).CrossRefGoogle Scholar
19.Cosnier, V., Olivier, M., Theret, G., and Andre, B.: HfO2–SiO2 interface in PVD coatings. J. Vac. Sci. Technol., A 19(5), 2267 (2001).CrossRefGoogle Scholar
20.Nguyen, N.V., Davydov, A.V., Chandler-Horowitz, D., and Frank, M.M.: Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon. Appl. Phys. Lett. 87(19), 192903 (2005).CrossRefGoogle Scholar
21.Kosacki, I., Petrovsky, V., and Anderson, H.U.: Band gap energy in nanocrystalline ZrO2:16%Y thin films. Appl. Phys. Lett. 74(3), 341 (1999).CrossRefGoogle Scholar
22.Ramana, C.V., Vemuri, R.S., Fernandez, I., and Campbell, A.L.: Size-effects on the optical properties of zirconium oxide thin films. Appl. Phys. Lett. 95(23), 231905 (2009).CrossRefGoogle Scholar
23.Park, J.W., Lee, D.K., Lim, D., Lee, H., and Choi, S.H.: Optical properties of thermally annealed hafnium oxide and their correlation with structural change. J. Appl. Phys. 104(3), 033521 (2008).CrossRefGoogle Scholar
24.Jaffe, J.E., Bachorz, R.A., and Gutowski, M.: Low-temperature polymorphs of ZrO2 and HfO2: A density-functional theory study. Phys. Rev. B 72, 144107 (2005).CrossRefGoogle Scholar
25.Demkov, A.A., Fonseca, L.R.C., Verret, E., Tomfohr, J., and Sankey, O.F.: Complex band structure and the band alignment problem at the Si–high-k dielectric interface. Phys. Rev. B 71, 195306 (2005).CrossRefGoogle Scholar
26.Demkov, A.A.: Investigating alternative gate dielectrics: A theoretical approach. Phys. Status Solidi B: Basic Res. 226(1), 57 (2001).3.0.CO;2-L>CrossRefGoogle Scholar