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Influence of Fe impurity in nitridation of Si + B4C green compact

Published online by Cambridge University Press:  31 January 2011

Dangrong R. Liu ,
Samuel Shinozaki ,
Motoyuki Miyata  and
Yoshiyuki Yasutomi
Dangrong R. Liu
Affiliation:
Ford Research Laboratory, Ford Motor Company, 20000 Rotunda Drive, Dearborn, Michigan 48121
Samuel Shinozaki
Affiliation:
Ford Research Laboratory, Ford Motor Company, 20000 Rotunda Drive, Dearborn, Michigan 48121
Motoyuki Miyata
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd., 1-1 Omika-Cho, 7-Chome, Hitachi-shi, Ibaraki-ken, 319-12 Japan
Yoshiyuki Yasutomi
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd., 1-1 Omika-Cho, 7-Chome, Hitachi-shi, Ibaraki-ken, 319-12 Japan
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Extract

The addition of B4C powder retarded the nitridation of the silicon powder green body by the formation of a borosilicate layer in interfaces between Si grains. The viscous layers hindered the SiO formation and the Si and N diffusion. Despite the presence of borosilicate layers, the Fe impurity in the green body still promoted the Si nitridation process by the formation of fluid iron silicide and the promotion of the B4C conversion to BN in gaps or holes in the viscous borosilicate layers. The addition of 5% H2 in the N2 atmosphere accelerated the Si + B4C nitridation, where the hydrogen acted as an oxygen getter, thus reducing the amount of glassy borosilicate in the interface.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 2 , February 1998 , pp. 329 - 342
Copyright
Copyright © Materials Research Society 1998

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