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Indium oxide/indium iron oxide thin films for photoelectrochemical hydrogen production with a-silicon solar cells
Published online by Cambridge University Press: 31 January 2011
Abstract
In this paper we focus on indium oxide and indium iron oxide as an alloy to fabricate a protective thin film (transparent, conductive, and corrosion resistant; TCCR) for amorphous silicon-based solar cells, which can be used in immersion-type photoelectrochemical cells for hydrogen production. From the work completed, the results indicate that samples made at 250 °C with indium and indium iron oxide targets powered at 30 and 100 W, respectively, and a sputter deposition time of 90 min produced optimal results when deposited directly on single-junction amorphous silicon solar cells. At 0.65 V (versus SCE), the best sample conditions display a maximum current density of 21.4 μA/cm2.
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- Information
- Journal of Materials Research , Volume 25 , Issue 1: Photocatalysis for Energy and Environmental Sustainability , January 2010 , pp. 25 - 31
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- Copyright © Materials Research Society 2010
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