Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-05T13:33:37.260Z Has data issue: false hasContentIssue false
  • English
  • Français

In-depth variations of diamond structures on Pt(111) investigated by confocal Raman spectroscopy

Published online by Cambridge University Press:  31 January 2011

Mikka Nishitani-Gamo ,
Takeshi Tachibana ,
Koji Kobashi ,
Isao Sakaguchi  and
Toshihiro Ando
Mikka Nishitani-Gamo*
Affiliation:
Core Research for Evolutional Science and Technology (CREST), c/o National Institute for Research in Inorganic Materials (NIRIM), 1–1 Namiki, Tsukuba, Ibaraki 305, Japan; and Toppan Printing Co. Ltd., Materials Research Laboratory, 4–2-3 Takanodai-Minami, Sugito, Saitama 345, Japan
Takeshi Tachibana
Affiliation:
Electronics & Information Technology Laboratory, Kobe Steel Ltd., –5-5 Takatsukadai, Nishi-ku, Kobe 651–22, Japan
Koji Kobashi
Affiliation:
Electronics & Information Technology Laboratory, Kobe Steel Ltd., –5-5 Takatsukadai, Nishi-ku, Kobe 651–22, Japan
Isao Sakaguchi
Affiliation:
Core Research for Evolutional Science and Technology (CREST), c/o National Institute for Research in Inorganic Materials (NIRIM), 1–1 Namiki, Tsukuba, Ibaraki 305, Japan
Toshihiro Ando*
Affiliation:
Core Research for Evolutional Science and Technology (CREST), c/o National Institute for Research in Inorganic Materials (NIRIM), 1–1 Namiki, Tsukuba, Ibaraki 305, Japan
*
a) Visiting research; [email protected]
b) Corresponding author;[email protected]
Get access

Abstract

We have characterized heteroepitaxial diamond films on Pt(111) using the nondestructive technique of confocal Raman spectroscopy to investigate the variation in structure and strain with depth. The spectral depth profiles of heteroepitaxial diamond showed the diamond peak at 1332–1335 cm-1 and four bands centered at 1230 cm-1, 1470–1490 cm-1, 1530–1580 cm-1, and 1640 cm-1 near the surface. The diamond peak shifted to the single crystal peak position at 1332 cm-1 as the linewidth was broadened with free surface proximity. The compressive strain in the heteroepitaxial diamond crystal decreased and turned into the random strain. At the same time, the Raman band at 1470–1490 cm-1 grew in intensity. The constituents of non-diamond phase in the heteroepitaxial growth regions are different from those formed in the randomly oriented regions.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 3 , March 1998 , pp. 774 - 777
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Shintani, Y., J. Mater. Res. 11, 2955 (1996).Google Scholar
2.Tachibana, T., Yokota, Y., Nishimura, K., Miyata, K., Kobashi, K., and Shintani, Y., Diamond Relat. Mater. 5, 197 (1996).CrossRefGoogle Scholar
3.N.-Gamo, M., Ando, T., Yamamoto, K., Dennig, P. A., and Sato, Y., J. Mater. Res. 12, 1351 (1997).Google Scholar
4.Maeda, H., Irie, M., Hino, T., Kusakabe, K., and Morooka, S., J. Mater. Res. 10, 158 (1995).CrossRefGoogle Scholar
5.Wolter, S. D., Stoner, B. R., Glass, J. T., Ellis, P. J., Buhaenko, D. S., Jenkins, C. E., and Southworth, P., Appl. Phys. Lett. 62, 1215 (1993).CrossRefGoogle Scholar
6.Suzuki, T., Yagi, M., and Shibuki, K., Appl. Phys. Lett. 64, 557 (1994).CrossRefGoogle Scholar
7.Stoner, B. R. and Glass, J. T., Appl. Phys. Lett. 60, 698 (1992).Google Scholar
8.Kawarada, H., Suesada, T., and Nagasawa, H., Appl. Phys. Lett. 66, 583 (1995).Google Scholar
9.N.-Gamo, M., Ando, T., Watanabe, K., Sekita, M., Dennig, P. A., Yamamoto, K., and Sato, Y., Diamond Relat. Mater. 6, 1036 (1997).CrossRefGoogle Scholar
10.N.-Gamo, M., Ando, T., Yamamoto, K., Watanabe, K., Dennig, P. A., Sato, Y., and Sekita, M., Appl. Phys. Lett. 70, 1530 (1997).Google Scholar
11.Peercy, P. S., Appl. Phys. Lett. 18, 574 (1971).CrossRefGoogle Scholar
12.Evans, D. J. and Ushioda, S., Phys. Rev. B 9, 1638 (1974).CrossRefGoogle Scholar
13.Buckley, R. G., Moustakas, T. D., Ye, L., and Varon, J., J. Appl. Phys. 66, 3595 (1989).CrossRefGoogle Scholar
14.Gonon, P., Gheeraert, E., Deneuville, A., Fontaine, F., Abello, L., and Lucazeau, G., J. Appl. Phys. 78, 7059 (1995).Google Scholar
15.Popovici, G., Chao, C. H., Prelas, M. A., Charlson, E. J., and Meese, J. M., J. Mater. Res. 10, 2011 (1996).CrossRefGoogle Scholar
16.Tachibana, T., Yokota, Y., Miyata, K., Onishi, T., Kobashi, K., Tarutani, M., Takai, Y., Shimizu, R., and Shintani, Y., Phys. Rev. B (in press).Google Scholar