Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-23T02:02:05.733Z Has data issue: false hasContentIssue false
  • English
  • Français

“In situ” XPS studies of laser-induced surface nitridation and oxidation of tantalum

Published online by Cambridge University Press:  14 July 2015

Ruth Lahoz ,
Juan Pedro Espinós ,
Francisco Yubero ,
Agustín Rodríguez González-Elipe  and
Germán Francisco de la Fuente
Ruth Lahoz
Affiliation:
Instituto de Ciencia de Materiales de Aragón (ICMA), CSIC-Universidad de Zaragoza, María de Luna 3, 50018 Zaragoza, Spain
Juan Pedro Espinós*
Affiliation:
Instituto de Ciencia de Materiales de Sevilla (ICMS), CSIC-Universidad de Sevilla, Américo Vespucio 49, 41092 Sevilla, Spain
Francisco Yubero
Affiliation:
Instituto de Ciencia de Materiales de Sevilla (ICMS), CSIC-Universidad de Sevilla, Américo Vespucio 49, 41092 Sevilla, Spain
Agustín Rodríguez González-Elipe
Affiliation:
Instituto de Ciencia de Materiales de Sevilla (ICMS), CSIC-Universidad de Sevilla, Américo Vespucio 49, 41092 Sevilla, Spain
Germán Francisco de la Fuente
Affiliation:
Instituto de Ciencia de Materiales de Aragón (ICMA), CSIC-Universidad de Zaragoza, María de Luna 3, 50018 Zaragoza, Spain
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

This work studies the nitridation of Ta by laser irradiation by means of x-ray photoelectron spectroscopy. The study has been carried out under “in situ” conditions by controlling the nitrogen partial pressure, the presence of traces of oxygen, and the irradiance of the laser. It is found that a thin layer of Ta2O5 is directly obtained when irradiating in the presence of oxygen, while a Ta3N5 surface compound and some minor contributions of nonstoichiometric phases are formed in the presence of nitrogen. For O2:N2 mixtures at 0.1 Pa, preferential nitride formation occurs up to a ratio of 1:4, while Ta2O5 starts to be predominant for ratios above this value. The air stability of the tantalum nitride layer formed by laser irradiation and the surface topography of the irradiated metal are also studied. The possible factors determining this behavior are discussed.

Keywords

laser-induced reactionnitridex-ray photoelectron spectroscopy (XPS)
Type
Articles
Information
Journal of Materials Research , Volume 30 , Issue 19: Focus Issue: Nitrides and Oxynitride Materials , 14 October 2015 , pp. 2967 - 2976
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Le Dréo, H., Banakh, O., Keppner, H., Steinmann, P.A., Briand, D., and De Rooij, N.F.: Optical, electrical and mechanical properties of tantalum oxynitride thin films deposited by pulsing reactive gas sputtering. Thin Solid Films 515, 952 (2006).Google Scholar
Hara, M., Takata, T., Kondo, J.N., and Domen, K.: Photochemical reduction of H2O by TaON under visible irradiation. Catal. Today 90, 313 (2004).Google Scholar
Banakh, O., Steinmann, P-A., and Dumitrescu-Buforn, L.: Optical and mechanical properties of tantalum oxynitride thin films deposited by reactive magnetron sputtering. Thin Solid Films 513, 136 (2006).CrossRefGoogle Scholar
Angelkort, C., Berendes, A., Lewalter, H., Bock, W., and Kolbesen, B.O.: Formation of tantalum nitride films by rapid thermal processing. Thin Solid Films 437, 108 (2003).Google Scholar
Ganin, A.Y., Kienle, L., and Vajenine, G.V.: Plasma-enhanced CVD synthesis and structural characterization of Ta2N3 . Eur. J. Inorg. Chem. 16, 3233 (2004).Google Scholar
Hara, M., Chiba, E., Ishikawa, A., Tanaka, T., Kondo, J.N., and Domen, K.: Ta3N5 and TaON thin films on Ta foil: Surface composition and stability. J.Phys.Chem. B 107(48), 13441 (2003).Google Scholar
Jong, C.A. and Chin, T.S.: Optical characteristics of sputtered tantalum oxynitride Ta(N,O) films. Mater. Chem. Phys. 74, 201 (2002).CrossRefGoogle Scholar
Swisher, J.H. and Read, M.H.: Thermodynamic properties and electrical conductivity of Ta3N5 and TaON. Metall. Trans. 3, 489 (1972).Google Scholar
Matizamhuka, W.R., Sigalas, I., and Herrmann, M.: Synthesis, sintering and characterisation of TaON materials. Ceram. Int. 34(6), 1481 (2008).Google Scholar
Khatko, T. and Khatko, V.: Laser synthesis of nitrides on the surface of refractory metals immersed in liquid nitrogen. Appl. Surf. Sci. 254, 961 (2007).CrossRefGoogle Scholar
Kerlau, M., Merdrignac-Conanec, O., Guilloux-Viry, M., and Perrin, A.: Synthesis of crystallized TaON and Ta3N5 by nitridation of Ta2O5 thin films grown by pulsed laser deposition. Solid State Sci. 6, 101 (2004).CrossRefGoogle Scholar
Jansen, M.: A concept for synthesis planning in solid state chemistry. Angew. Chem., Int. Ed. 41, 3746 (2002).Google Scholar
Jansen, M. and Schön, J.C.: Design in chemical synthesis-an illusion? Angew. Chem., Int. Ed. 45, 3406 (2006).Google Scholar
Lahoz, R., Espinós, J.P., De la Fuente, G.F., and González-Elipe, A.R.: In-situ XPS studies of laser induced surface cleaning and nitridation of Ti. Surf. Coat. Technol. 202, 1486 (2008).Google Scholar
Venkataraj, S., Kittur, H., Drese, R., and Wuttig, M.: Multi-technique characterization of tantalum oxynitride films prepared by reactive direct current magnetron sputtering. Thin Solid Films 514, 1 (2006).Google Scholar
Lu, Y.M., Weng, R.J., Hwang, W.S., and Yang, Y.S.: Study of phase transition and electrical resistivity of tantalum nitride films prepared by DC magnetron sputtering with OES detection system. Thin Solid Films 398–399, 356 (2001).Google Scholar
Sánchez-Valencia, J.R., Toudert, J., Borrás, A., Barranco, A., Lahoz, R., de la Fuente, G.F., Frutos, F., and González-Elipe, A.R.: Selective dichroic patterning by nanosecond laser treatment of Ag nanostripes. Adv. Mater. 23, 848 (2011).Google Scholar
Lahoz, R., de la Fuente, G.F., Pedra, J.M., and Carda, J.B.: Laser engraving of ceramic tiles. Int. J. Appl. Ceram. Technol. 8, 1208 (2011).Google Scholar
Bäuerle, D.: Laser Processing and Chemistry, 3rd ed. (Springer-Verlag, Berlin, Germany, 2000).Google Scholar
Rubahn, H.G.: Laser Applications in Surface Science and Technology (Wiley, Chichester, UK, 1999).Google Scholar
Hofmann, S.: Formation and diffusion properties of oxide-films on metals and on nitride coatings studied with Auger-electron spectroscopy and X-ray photoelectron spectroscopy. Thin Solid Films 193–194, 648 (1990).Google Scholar
Atanassova, E. and Spassov, D.: X-ray photoelectron spectroscopy of thermal thin Ta2O5 films on Si. App. Surf. Sci. 135, 71 (1998).Google Scholar
Gnanarajan, S. and Lam, S.K.H.: Evolution of epitaxial Ta2O5 and Ta2O films during thermal oxidation of epitaxial tantalum films on sapphire substrates. J. Vac. Sci. Technol., A 26, 494 (2008).Google Scholar
Arshi, N., Lu, J., Lee, C.G., Koo, B.H., and Ahmed, F.: Effects of nitrogen content on the phase and resistivity of TaN thin films deposited by electron beam evaporation. JOM 66(9), 1893 (2014).Google Scholar
Carvalho, P., Chappé, J.M., Cunha, L., Lanceros-Mendez, S., Alpuim, P., Vaz, F., Alves, E., Rousselot, C., Espinós, J.P., and González-Elipe, A.R.: Influence of the chemical and electronic structure on the electrical behavior of zirconium oxynitride films. J. Appl. Phys. 103, 104907 (2008).Google Scholar
Lamour, P., Fioux, P., Ponche, A., Nardin, M., Vallat, M.F., Dugay, P., Brun, J.P., Moreaud, N., and Pinvidicb, J.M.: Direct measurement of the nitrogen content by XPS in self passivated TaNx thin films. Surf. Interface Anal. 40, 1430 (2008).Google Scholar
Dang, H.X., Hahn, N.T., Park, H.S., Bard, A.J., and Mullins, C.B.: Nanostructured Ta3N5 films as visible light active photoanodes for water oxidation. J. Phys. Chem. C 116, 19225 (2012).Google Scholar
Wilks, J.A., Magtoto, N.P., Kelber, J.A., and Arunachalam, V.: Interface reactions during sputter deposition of Ta and TaN films on organosilicate glass: XPS and TEM results. Appl. Surf. Sci. 253, 6176 (2007).Google Scholar
Zier, M., Oswald, S., Reiche, R., and Wetzig, K.: XPS and ARXPS investigations of ultra thin TaN films deposited on SiO2 and Si. Appl. Surf. Sci. 252, 234 (2005).Google Scholar
Tanuma, S., Powell, C.J., and Penn, D.R.: Calculations of electron inelastic mean free paths. V. Data for 14 organic compounds over the 50–2000 eV range. Surf. Interface. Anal. 21, 165 (1993).Google Scholar
Geretovszky, Z., Szörenyi, T., Stoquert, J.P., and Boyd, I.W.: Correlation of compositional and structural changes during pulsed laser deposition of tantalum oxide films. Thin Solid Films 453–454, 245 (2004).Google Scholar
Maeng, S., Axe, L., Tyson, T., and Jiang, A.: An investigation of structures of thermal and anodic tantalum oxide films. J. Electrochem. Soc. 152, B60 (2005).Google Scholar
Yano, T., Ooie, T., Yoneda, M., Katsumura, M., Hino, T., and Araki, T.: Formation of Ta2O5 films by laser ablation from Ta target under oxygen atmosphere. J. Jpn. Inst. Met. 61, 71 (1997).Google Scholar
Sol, C. and Tilley, RJD.: Ultraviolet laser irradiation induced chemical reactions of some metal oxides. J. Mater. Chem. 11, 815 (2001).Google Scholar