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In situ transmission electron microscopy investigation of threading dislocation motion in passivated thin aluminum films

Published online by Cambridge University Press:  31 January 2011

R-M. Keller-Flaig
Affiliation:
Max-Planck-Institut für Metallforschung and Institut für Metallkunde der Universität Stuttgart, Seestr. 71, D-70174 Stuttgart, Germany
M. Legros
Affiliation:
Laboratoire de Physique des Matériaux/CNRS—Ecole des Mines, Parc de Saurupt, 54042 Nancy Cedex, France
W. Sigle
Affiliation:
Max-Planck-Institut für Metallforschung Seestr., D-70174 Stuttgart, Germany
A. Gouldstone
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
K. J. Hemker
Affiliation:
Department of Mechanical Engineering, Johns Hopkins University, Baltimore, Maryland 21218–2681
S. Suresh
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
E. Arzt
Affiliation:
Max-Planck-Institut für Metallforschung and Institut für Metallkunde der Universität Stuttgart, Seestr. 71, D-70174 Stuttgart, Germany
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Abstract

In situ transmission electron microscopy (TEM) was performed to study dislocation motion during temperature cycles in aluminum films passivated with a SiO2 layer. The films were cycled from room temperature to 450 °C. Wedge-haped cross-sectional TEM samples were used to retain the constraint of the Si substrate. Besides interactions between dislocations and interfaces, the movement of threading dislocations within the constrained aluminum film was observed. This observation provides an experimental corroboration of the occurrence of threading dislocation motion, which is the basis for rationalizing the high-ield strength of thin films in available models of thin-film plasticity.

Type
Articles
Copyright
Copyright © Materials Research Society 1999

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