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Improvement of a–Si1−xCx: H/a–Si: H p/i interface by hydrogen–plasma flushing studied by photoluminescence

Published online by Cambridge University Press:  31 January 2011

Daxing Han ,
J.I. Pankove ,
Y.S. Tsuo ,
C.H. Qiu  and
Y. Xu
Daxing Han
Affiliation:
University of Colorado at Boulder, Boulder, Colorado 80309–0425
J.I. Pankove
Affiliation:
University of Colorado at Boulder, Boulder, Colorado 80309–0425 and Solar Energy Research Institute, Golden, Colorado 80401–3393
Y.S. Tsuo
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401–3393
C.H. Qiu
Affiliation:
University of Colorado at Boulder, Boulder, Colorado 80309–0425
Y. Xu
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401–3393
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Abstract

A hydrogen–plasma reactive flush of the glow discharge reactor after boron–doped a–Si1−xCx : H film deposition has been used to reduce boron contamination of subsequently deposited intrinsic a–Si:H. Photoluminescence studies of p/i structures in a–Si: H show that the hydrogen–plasma process increases both the luminescence efficiency and the activation energy for the competing nonradiative recombination. The process also shifts the emission peak to higher energies by 25 meV.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 9 , September 1991 , pp. 1900 - 1904
Copyright
Copyright © Materials Research Society 1991

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References

1.Sabisky, E. S. and Stone, J. L., in Proc. 20th IEEE Photovoltaics Specialists Conf. (IEEE, 1988), pp. 39–47.Google Scholar
2.Tsuo, Y. S., Xu, Y., Crandall, R. S., Ullal, H. S., and Emery, K., in Amorphous Silicon Technology-1989, edited by Madan, A., Thompson, M. J., Taylor, P. C., Hamakawa, Y., and LeComber, P. G. (Mater. Res. Soc. Symp. Proc. 149, Pittsburgh, PA, 1989), pp. 471–476.Google Scholar
3.Street, R. A., in Semiconductors and Semimetals, edited by Pankove, J. I. (Academic Press, New York, 1984), Vol. 21B, pp. 197–244.Google Scholar
4.Pankove, J. I., Appl. Phys. Lett. 32, 812 (1978).CrossRefGoogle Scholar
5.Catalano, A. and Wood, G., J. Appl. Phys. 63, 1220 (1988).CrossRefGoogle Scholar
6.Pankove, J. I. and Berkeyheiser, J. E., Appl. Phys. Lett. 37, 705 (1980).CrossRefGoogle Scholar
7.Pankove, J. I., Optical Processes in Semiconductors (Dover, New York, 1975).Google Scholar
8.Tsang, C. and Street, R. A., Phys. Rev. B 19, 3027 (1979).CrossRefGoogle Scholar
9.Hishikawa, Y., Tsuge, S., Nakamura, N., Tsuda, S., Nakano, S., and Kuwano, Y., Appl. Phys. Lett. 57, 771 (1990).CrossRefGoogle Scholar
10.Blayo, N. and Drevillon, B., Appl. Phys. Lett. 57, 786 (1990).CrossRefGoogle Scholar