Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-23T13:26:22.301Z Has data issue: false hasContentIssue false
  • English
  • Français

Improvement in tunability and dielectric loss of (Ba0.5Sr0.5)TiO3 capacitors using seed layers on Pt/Ti/SiO2/Si substrates

Published online by Cambridge University Press:  31 January 2011

Young-Ah Jeon ,
Woong-Chul Shin ,
Tae-Suck Seo  and
Soon-Gil Yoon
Young-Ah Jeon
Affiliation:
Department of Materials Engineering, Chungnam National University, Daeduk Science Town, 305–764, Taejon, Korea
Woong-Chul Shin
Affiliation:
Department of Materials Engineering, Chungnam National University, Daeduk Science Town, 305–764, Taejon, Korea
Tae-Suck Seo
Affiliation:
Department of Materials Engineering, Chungnam National University, Daeduk Science Town, 305–764, Taejon, Korea
Soon-Gil Yoon
Affiliation:
Department of Materials Engineering, Chungnam National University, Daeduk Science Town, 305–764, Taejon, Korea
Get access

Abstract

The absence of a low dielectric constant layer at the barium strontium titanate (BST)/Pt interface and a decreased roughness are critical issues in the production of (Ba0.5Sr0.5)TiO3 thin films with high tunabilities and low losses. An improvement in dielectric properties was achieved by the insertion of seed layers at the BST/Pt interface by pulsed laser deposition. The higher tunability can be attributed to (100) texturing of the BST films, which is independent of grain size and grain morphologies, thus leading to a variation in seed layer thicknesses. The tunability and dielectric constant of 1600-Å-thick BST films showed a maximum of 53% and 720, respectively, at a seed layer thickness of 100 Å. Dielectric loss is dependent on the roughness of BST films and reached a minimum of 0.8% at a root mean square roughness of 28 Å. The maximum figures of merit, defined as the ratio of tunability to dielectric loss, of approximately 58 at 100 kHz and 198 kV/cm were obtained at a seed layer thickness of 70 Å. The optimized seed layer thickness for BST deposition onto Pt/Ti/SiO2/Si substrates plays an important role in maintaining the high tunabilities and low loss, which are suitable for microwave device applications.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 11 , November 2002 , pp. 2831 - 2836
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Yoon, S.G., Lee, J.C., and Safari, A., Integr. Ferroelectr. 7, 329 (1995).Google Scholar
2.Kingon, A.I., Streiffer, S.K., Basceri, C., and Summerfelt, S.R., Mater. Res. Bull. 21, 18 (1995).Google Scholar
3.Anda, F.A., Keuls, F.W. Van, Romanofsky, R.R., and Subramanyam, G., Integr. Ferroelectr. 22, 269 (1998).Google Scholar
4.Kim, W.J., Chang, W., Qadri, S.B., Pond, J.M., Kirchoefer, S.W., Chrisey, D.B., and Horwitz, J.S., Appl. Phys. Lett. 76, 1185 (2000).CrossRefGoogle Scholar
5.Chang, W., Horwitz, J.S., Carter, A.C., Pond, J.M., Kirchoefer, S.W., Gilmore, C.M., and Chrisey, D.B., Appl. Phys. Lett. 74, 1033 (1999).CrossRefGoogle Scholar
6.Zafar, S., Jones, R.E., Chu, P., White, B., Jiang, B., Taylor, D., Zurcher, P., and Gillepsie, S., Appl. Phys. Lett. 72, 2820 (1998).CrossRefGoogle Scholar
7.Yoon, S.G. and Safari, A., Thin Solid Films 254, 211 (1995).Google Scholar
8.Cho, H.J. and Kim, H.J., Appl. Phys. Lett. 72, 2820 (1998).Google Scholar
9.Chern, C.S., Liang, S., Shi, Z.Q., Yoon, S.G., Safari, A., Lu, P., and Kear, B.H., Appl. Phys. Lett. 64, 3181 (1994).Google Scholar
10.Yoon, S.G., Lee, J.C., and Safari, A., J. Appl. Phys. 76, 2999 (1994).CrossRefGoogle Scholar
11.Park, B.H., Peterson, E.J., Jia, Q.X., Lee, J., Zeng, X., Si, W., and Xi, X.X., Appl. Phys. Lett. 78, 533 (2001).Google Scholar
12.Lee, S.T., Fujimura, N., and Ito, T., Jpn. J. Appl. Phys. Part 1 34, 5168 (1995).CrossRefGoogle Scholar
13.Jeon, Y.A., Choi, E.S., Seo, T.S., and Yoon, S.G., Appl. Phys. Lett. 79, 1012 (2001).CrossRefGoogle Scholar
14.Seo, T.S., Oho, Y.N., and Yoon, S.G. (unpublished).Google Scholar
15.Lee, W.J., Yoon, S.G., and Kim, H.G., J. Appl. Phys. 80, 5891 (1996).CrossRefGoogle Scholar
16.Choi, Y.C., Lee, J., and Lee, B.S., Jpn. J. Appl. Phys. Part 1 36, 6824 (1997).CrossRefGoogle Scholar
17.Kinder, L., Zhang, X.F., Grigorov, I.L., Kwon, C., Jia, Q.X., Luo, L., and Zhao, J., J. Vac. Sci. Technol. A 17, 2148 (1999).CrossRefGoogle Scholar
18.Lee, J.C. and Yoon, S.G., J. Vac. Sci. Technol. B 17, 2182 (1999).CrossRefGoogle Scholar
19.Kozyrev, A.B., Keis, V.N., Koepf, G., Yandrofski, R., Soldatenkov, O.I., Dudin, K.A., and Dovgan, D.P., Microelectron. Eng. 29, 257 (1995).CrossRefGoogle Scholar