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Improvement in the crystallinity and electrical properties in Hg1−xCdxTe epilayers utilizing CdTe buffer layers grown on GaAs substrates by a two-step annealing process

Published online by Cambridge University Press:  31 January 2011

Y.S. Ryu ,
B.S. Song ,
H.J. Kim ,
T.W. Kang  and
T.W. Kim
Y.S. Ryu
Affiliation:
Department of Physics and Quantum-functional Semiconductor Research Center, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea
B.S. Song
Affiliation:
Department of Physics and Quantum-functional Semiconductor Research Center, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea
H.J. Kim
Affiliation:
Department of Physics and Quantum-functional Semiconductor Research Center, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea
T.W. Kang
Affiliation:
Department of Physics and Quantum-functional Semiconductor Research Center, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea
T.W. Kim
Affiliation:
Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea
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Abstract

High-quality Hg1−xCdxTe epilayers on CdTe buffer layers were grown by molecular beam epitaxy using various growth methods. The reflection high-energy electron diffraction, scanning electron microscopy, and atomic force microscopy measurements showed that the crystallinity and electrical properties of the Hg1−xCdxTe epilayers grown on CdTe buffer layers deposited by using a two-step annealing growth method were improved. These results indicate that high-quality Hg1−xCdxTe films can be obtained by using CdTe buffer layers grown by the two-step annealing growth method and that the grown Hg1−xCdxTe epilayers hold promise for potential applications in optoelectronic devices in the area of infrared detectors.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 2 , February 2003 , pp. 257 - 261
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

Lange, M.D., Sivananthan, S., Chu, X., and Faurie, J.P., Appl. Phys. Lett. 52, 978 (1988).CrossRefGoogle Scholar
Arias, J.M., Zandian, M., Shin, S.H., McLevige, W.V., Pasko, J.G., DeWames, R.R., J. Vac. Sci. Technol. B 9, 1646 (1991).CrossRefGoogle Scholar
Sasaki, T. and Oda, N., J. Appl. Phys. 78, 3121 (1995).CrossRefGoogle Scholar
Lyon, T.J. de, Rajavel, D.R., Vigil, J.A., Jensen, J.E., Wu, O.K., Cockum, C.A., Johnson, S.M., Venzor, G.M., Bailey, S.L., Kasai, I., Ahigren, W.L., and Smith, M.S., J. Electron. Mater. 27, 550 (1998).CrossRefGoogle Scholar
Rajavel, R.D., Jamba, D.M., Jensen, J.E., Wu, O.K., LeBeau, C., Wilson, J.A., Patten, E., Kosai, K., Johnson, J., Rosbeck, J., Goetz, P., and Johnson, S.M., J. Electron. Mater. 26, 476 (1997).CrossRefGoogle Scholar
Han, M.S., Kang, T.W., Kim, M.D., Jeoung, Y.T., Kim, H.K., Kim, J.M., Woo, H.J., and Kim, T.W., Appl. Surf. Sci. 120, 287 (1997).CrossRefGoogle Scholar
Gough, J.S., Houlton, M.R., Irvine, S.J.C., Shaw, N., Young, M.L., Astles, M.G., J. Vac. Sci. Technol. B 9, 1687 (1991).CrossRefGoogle Scholar
Zhonghai, Yu., Hofer, S.G., Giles, N.C., and Myers, T.H., Phys. Rev. B 51, 13789 (1995).Google Scholar
Han, M.S., Kang, T.W., and Kim, T.W., Solid State Commun. 105, 709 (1998).CrossRefGoogle Scholar
Xin, Y., Browning, N.D., Rujirawat, S., Sivananthan, S., and Chen, Y.P., J. Appl. Phys. 84, 4292 (1998).CrossRefGoogle Scholar
He, L., Yang, J.R., Wang, S.L., Guo, S.P., Yu, M.F., Chen, X.Q., Fang, W.Z., Zhang, Y.M.Q.Y., Ding, R.J., and Xin, T.L., J. Cryst. Growth 175, 677 (1997).CrossRefGoogle Scholar
Destefanis, G.L., J. Cryst. Growth 86, 700 (1998).CrossRefGoogle Scholar
Yoo, S.D. and Kwack, K.D., J. Appl. Phys. 83, 2586 (1998).CrossRefGoogle Scholar
Han, M.S., Kang, T.W., and Kim, T.W., J. Mater. Res. 14, 2778 (1999).CrossRefGoogle Scholar
He, L., Wang, S.L., Yang, J.R., Yu, M.F., Wu, Y., Chen, X.Q., Fang, W.Z., Qiao, Y.M., Gui, Y., and Chu, J.. J. Cryst. Growth 201, 524 (1999).CrossRefGoogle Scholar