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Imaging of piezoelectric activity in laser-ablated c-axis-oriented LiNbO3/ZnO thin film multilayer on glass using atomic force microscopy

Published online by Cambridge University Press:  31 January 2011

Parmanand Sharma*
Affiliation:
Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India
K. Sreenivas
Affiliation:
Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India
L. M. Belova
Affiliation:
Department of Materials Science-Tmfy-MSE, Royal Institute of Technology, S-100 44 Stockholm, Sweden, and General Physics Institute, Moscow, 117942, Russia
K. V. Rao
Affiliation:
Department of Materials Science-Tmfy-MSE, Royal Institute of Technology, S-100 44 Stockholm, Sweden
*
a) Address all correspondence to this author. Present address: Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai, 980-8577, Japan. e-mail: [email protected]
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Abstract

A LiNbO3/ZnO multilayer with a preferred c-axis orientation normal to the plane of the substrate was grown on glass and SiO2/Si substrates by laser ablation. The piezoelectric activity in as-deposited films was demonstrated using a novel approach to the atomic force microscope. In the presence of an in-plane, low-frequency (0.1–5 Hz) alternating current electric field, we monitored and imaged the induced piezoelectric response normal to the film plane between two electrodes.

Type
Rapid Communications
Copyright
Copyright © Materials Research Society 2003

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