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Identification of Cl and Na Impurities in Inclusions of a Vapor-grown CdTe Doped with Zn and Cl

Published online by Cambridge University Press:  31 January 2011

V. Corregidor
Affiliation:
Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid, Spain
V. Babentsov
Affiliation:
Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid, Spain
M. Fiederle
Affiliation:
Kristallographisches Institut, Universitat Freiburg, Hebelstrasse 25, D-79104, Freiburg, Germany
T. Feltgen
Affiliation:
Kristallographisches Institut, Universitat Freiburg, Hebelstrasse 25, D-79104, Freiburg, Germany
K. Benz
Affiliation:
Kristallographisches Institut, Universitat Freiburg, Hebelstrasse 25, D-79104, Freiburg, Germany
E. Dieguez*
Affiliation:
Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid, Spain
*
a)Address all correspondence to this author. e-mail: [email protected]
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Extract

Morphology and analysis of composition of inclusions were done by secondary electron microscopy and spatially resolved energy-dispersive analysis of x-ray on semiintrinsic CdTe:Cl and CdTe:Zn:Cl crystals grown from the vapor phase by the modified Markov technique and on undoped CdTe crystals grown from the melt by the Bridgman method. In CdTe:Cl and CdTe:Zn:Cl crystals nonstoichiometric inclusions of about 10–20 μm were found, which contain high concentrations of Cl and Na impurities. The Cl is concentrated in small precipitates of 1–2 μm inside these inclusions. After short-time low-temperature annealing (600 °C), the inclusions mostly disappeared.

Type
Articles
Copyright
Copyright © Materials Research Society 2002

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