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Hydrogen binding and diffusion in diamond

Published online by Cambridge University Press:  31 January 2011

S.P. Mehandru ,
Alfred B. Anderson  and
John C. Angus
S.P. Mehandru
Affiliation:
Chemistry Department, Case Western Reserve University, Cleveland, Ohio 44106
Alfred B. Anderson
Affiliation:
Chemistry Department, Case Western Reserve University, Cleveland, Ohio 44106
John C. Angus
Affiliation:
Department of Chemical Engineering, Case Western Reserve University, Cleveland, Ohio 44106
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Abstract

We have investigated the binding and diffusion pathways for atomic hydrogen in diamond using the semiempirical atom superposition and electron delocalization molecular orbital (ASED-MO) theory. The bond-centered site has been found to be more stable than the tetrahedral and hexagonal interstitial sites due to the formation of a low-lying band-gap orbital which takes the promoted electron. A second hydrogen binds even more stably to the nearby antibonding site with additional stabilization of the now doubly occupied band gap orbital. The bond-centered hydrogen is predicted to migrate along the high-density (110) planes in the diamond lattice with an activation barrier of 1.9 eV. A carbon atom vacancy is found to attract interstitial H which bind to dangling orbitals on the surrounding C atoms. These bond strengths decrease as up to a maximum of four H atoms enters the vacancy. A hydrogen atom in a vacancy is found to increase the activation energy for vacancy migration.

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Articles
Information
Journal of Materials Research , Volume 7 , Issue 3 , March 1992 , pp. 689 - 695
Copyright
Copyright © Materials Research Society 1992

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