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High-temperature oxidation behavior of reaction-formed silicon carbide ceramics

Published online by Cambridge University Press:  03 March 2011

Linus U.J.T. Ogbuji  and
M. Singh
Linus U.J.T. Ogbuji
Affiliation:
NYMA, Inc., Lewis Research Center Group, Cleveland, Ohio 44135
M. Singh
Affiliation:
NYMA, Inc., Lewis Research Center Group, Cleveland, Ohio 44135
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Abstract

The oxidation behavior of reaction-formed silicon carbide (RFSC) ceramics was investigated in the temperature range of 1100 to 1400 °C. The oxidation weight change was recorded by TGA; the oxidized materials were examined by light and electron microscopy, and the oxidation product by x-ray diffraction analysis (XRD). The materials exhibited initial weight loss, followed by passive weight gain (with enhanced parabolic rates, kp), and ending with a negative (logarithmic) deviation from the parabolic law. The weight loss arose from the oxidation of residual carbon, and the enhanced kp values from internal oxidation and the oxidation of residual silicon, while the logarithmic kinetics is thought to have resulted from crystallization of the oxide. The presence of a small amount of MoSi2 in the RFSC material caused a further increase in the oxidation rate. The only solid oxidation product for all temperatures studied was silica.

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Articles
Information
Journal of Materials Research , Volume 10 , Issue 12 , December 1995 , pp. 3232 - 3240
Copyright
Copyright © Materials Research Society 1995

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