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High temperature creep of SiC densified using a transient liquid phase

Published online by Cambridge University Press:  31 January 2011

Zuei C. Jou ,
Anil V. Virkar  and
Raymond A. Cutler
Zuei C. Jou
Affiliation:
Department of Materials Science and Engineering, The University of Utah, Salt Lake City, Utah 84112
Anil V. Virkar
Affiliation:
Department of Materials Science and Engineering, The University of Utah, Salt Lake City, Utah 84112
Raymond A. Cutler
Affiliation:
Ceramatec, Inc., 2425 South 900 West, Salt Lake City, Utah 84119
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Abstract

Silicon carbide-based ceramics can be rapidly densified above approximately 1850 °C due to a transient liquid phase resulting from the reaction between alumina and aluminum oxycarbides. The resulting ceramics are fine-grained, dense, and exhibit high strength at room temperature. SiC hot pressed at 1875 °C for 10 min in Ar was subjected to creep deformation in bending at elevated temperatures between 1500 and 1650 °C in Ar. Creep was thermally activated with an activation energy of 743 kJ/mol. Creep rates at 1575 °C were between 10−9/s and 10−7/s at an applied stress between 38 and 200 MPa, respectively, resulting in a stress exponent of ≍1.7.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 9 , September 1991 , pp. 1945 - 1949
Copyright
Copyright © Materials Research Society 1991

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