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High Rate in situ YBa2Cu3O7 Film Growth Assisted by Liquid Phase

Published online by Cambridge University Press:  03 March 2011

T. Ohnishi ,
J-U. Huh ,
R.H. Hammond  and
W. Jo
T. Ohnishi
Affiliation:
Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305-4045
J-U. Huh
Affiliation:
Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305-4045
R.H. Hammond
Affiliation:
Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305-4045
W. Jo
Affiliation:
Department of Physics and Division of Nano Sciences, Ewha Womans University, Seoul 120-750, Korea
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Abstract

High-rate (10 nm/s) in situ YBa2Cu3O7 (YBCO) film growth was demonstrated by molecular beam epitaxy with electron beam co-evaporation at a system pressure of approximately 5 × 10-5 Torr. To explain the phase stability observed, it is suggested that activated oxygen is generated in the process. Growth of very good YBCO, with a Jc of more than 2 MA/cm2, is possible at this very high rate because the growth is in a liquid (Ba–Cu–O), which forms along with the YBCO epitaxy. This liquid seems essential for high Jc-YBCO film growth at very high in situ growth rates and may be essential for all high-rate processes, including postanneal ex situ processes.

Keywords

Phase equilibriaSuperconductorMolecular beam epitaxy
Type
Rapid Communications
Information
Journal of Materials Research , Volume 19 , Issue 4 , April 2004 , pp. 977 - 981
Copyright
Copyright © Materials Research Society 2004

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References

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