Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-26T06:55:03.607Z Has data issue: false hasContentIssue false
  • English
  • Français

High dielectric constant and small temperature coefficient bismuth-based dielectric compositions

Published online by Cambridge University Press:  31 January 2011

H. C. Ling ,
M. F. Yan  and
W. W. Rhodes
H. C. Ling
Affiliation:
AT & T Bell Laboratories, Princeton, New Jersey 08540
M. F. Yan
Affiliation:
AT & T Bell Laboratories, Murray Hill, New Jersey 07974
W. W. Rhodes
Affiliation:
AT & T Bell Laboratories, Murray Hill, New Jersey 07974
Get access

Abstract

We have studied the crystal structure and the dielectric properties of a scries of Bi-based ceramic compositions as a function of compositional variation and sintering temperature. These dielectrics have dielectric constants hetween 70 and 165 and their temperature coefficients are within ±500 × 10−6/°C. The precise temperature coefficient can be controlled via compositional changes such that dielectrics with temperature coefficients within ±50 × 10−6/°C are easily obtainable. The room temperature dissipation factor is smaller than 0.001 or equivalently, the Q value is greater than 1000. The electrical resistivity is greater than 1014 ohm-cm. Furthermore, these dielectrics are sinterable below 960 °C, rendering it possible to use silver or high silver metallization as the internal electrode in making the multilayer ceramic capacitors.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 8 , August 1990 , pp. 1752 - 1762
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Marzullo, S. and Bunting, E. N., J. Am. Ceram. Soc. 41, 40–41 (1958).CrossRefGoogle Scholar
2Paladino, A. E., J. Am. Ceram. Soc. 64, 168–169 (1971).CrossRefGoogle Scholar
3Rath, Von W., Ber. Deut. Keram. Ges. 28940, 177–193 (1951).Google Scholar
4Stetson, H. and Schwarz, B., J. Am. Ceram. Soc. 44 (8), 420–421 (1961).CrossRefGoogle Scholar
5Yamaguchi, T., Komatsu, Y., Otobe, T., and Murakami, Y., Ferroelectrics 27, 273–276 (1980).CrossRefGoogle Scholar
6Herbert, T. M., Ceramic Dielectrics and Capacitors (Gordon and Breach Science Publishers, 1985), pp. 115–117.Google Scholar
7Takahashi, J. and Kageyama, K., in “Ceramic Dielectrics: Composition, Processing and Properties,” Ceramic Transactions, edited by Ling, H. C. and Yan, M. F. (Am. Ceram. Soc, 1990), Vol. 8, pp. 333–343.Google Scholar
8Ling, H. C. and Yan, M. F., “Ceramic Compositions and Devices,” patent No. 4638 401 (January 20, 1987); Yan, M. F., Ling, H. C., and Rhodes, W. W., J. Am. Ceram. Soc. 73, 1106–1107 (1990).Google Scholar
9Ling, H. C., Yan, M. F., and Rhodes, W. W., J. Mater. Sci. 24, 541–548 (1989).CrossRefGoogle Scholar