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Heteroepitaxy of rare-earth hexa-aluminates on sapphire

Published online by Cambridge University Press:  03 March 2011

K.J. Vaidya ,
C.Y. Yang ,
M. DeGraef  and
F.F. Lange
K.J. Vaidya
Affiliation:
Materials Department, College of Engineering, University of California, Santa Barbara, California 93106
C.Y. Yang
Affiliation:
Materials Department, College of Engineering, University of California, Santa Barbara, California 93106
M. DeGraef
Affiliation:
Materials Department, College of Engineering, University of California, Santa Barbara, California 93106
F.F. Lange
Affiliation:
Materials Department, College of Engineering, University of California, Santa Barbara, California 93106
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Abstract

We have grown epitaxial thin films of rare-earth hexa-aluminates on basal plane sapphire from liquid precursors. LnAl11O18 (Ln = Gd3+, Nd3+) films form via the reaction of a perovskite intermediate phase and the sapphire substrate according to LnAlO3 + 5Al2O3 = LnAl11O18. Hexa-aluminate thin films with magnetoplumbite (MP) structure grow epitaxially with (0001)mp ‖(0001)s, 〈1120mp‖〈1010〉s orientation relationship. The a-axis of the film is rotated 30°with respect to the substrate. This rotation results in a smaller mismatch (∼1%) between the two oxygen sublattices. Thermodynamic and kinetic arguments pertaining to magnetoplumbite formation for the smaller Gd3+ cation are presented. These epitaxial thin films are likely to have application in higher temperature ion conduction, catalysis, fluorescence, and as laser host.

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Articles
Information
Journal of Materials Research , Volume 9 , Issue 2 , February 1994 , pp. 410 - 419
Copyright
Copyright © Materials Research Society 1994

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References

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