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Heat treatment of spun-on acid-catalyzed sol-gel silica films

Published online by Cambridge University Press:  03 March 2011

T.M. Parrill
T.M. Parrill
Affiliation:
IBM Semiconductor Research and Development Center, IBM East Fishkill Facility Z/522, 1580 Route 52, Hopewell Junction, New York 12533-6531
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Abstract

SiO2 films, formed by spin coating acid-catalyzed TEOS-based sol-gel on Si substrates, were annealed at 300–1000 °C and analyzed using ellipsometry, FTIR, and in situ stress measurements. Film porosity ranged from an average of 28% before annealing to 7% after annealing 3 h at 1000 °C. Below ≍800 °C, water and silanol removal caused a decrease in refractive index and increase in the in-plane tensile stress. Infrared spectra indicated compressive strain normal to the plane, however. Above ≍800 °C, further densification and structural relaxation occurred. Exposure to H2O also caused relaxation after annealing, as the most compressed Si–O–Si units reacted preferentially with moisture.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 3 , March 1994 , pp. 723 - 730
Copyright
Copyright © Materials Research Society 1994

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