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Growth of textured diamond films on Si(100) by C2H2/O2 flame method

Published online by Cambridge University Press:  31 January 2011

J. Hwang ,
K. Zhang ,
B. S. Kwak ,
A. Erbil  and
Z. C. Feng
J. Hwang
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332
K. Zhang
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332
B. S. Kwak
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332
A. Erbil*
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332
Z. C. Feng
Affiliation:
Department of Physics, Emory University, Atlanta, Georgia 30322
*
a)Address correspondence to this author.
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Abstract

Highly textured diamond thin films with (111) orientation have been successfully grown on the single crystal silicon (100) substrates by the flame method using the premixed acctylene and oxygen gas. Scanning electron microscopy (SEM), x-ray diffraction, and Raman spectroscopy studies have shown the formation of uniform diamond films with the full coverage of the deposition area on the Si substrates. An approach which leads to growing diamond films with very low graphite and/or amorphous carbon contaminations is described.

Type
Diamond and Diamond-Like Materials
Information
Journal of Materials Research , Volume 5 , Issue 11 , November 1990 , pp. 2334 - 2336
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1Bachmann, P. K. and Messier, R., C & EN proceedings, May 15, 24 (1989).Google Scholar
2Spear, K. E., Earth and Mineral Sciences 56 (4), 53 (1987).Google Scholar
3Matsumoto, S., Sato, Y., Kamo, M., and Setaka, N., Jpn. J. Appl. Phys. 21, L183 (1982).CrossRefGoogle Scholar
4Singh, B., Arie, Y., Levine, A.W., and Mesker, O. R., Appl. Phys. Lett. 52, 451 (1988).CrossRefGoogle Scholar
SSetaka, N., J. Mater. Res. 4, 664 (1989).CrossRefGoogle Scholar
6Kamo, K., Sato, Y., Matsumoto, S., and Setaka, N., J. Cryst. Growth 62, 642 (1983).CrossRefGoogle Scholar
7Watanabe, I. and Sugata, K., Jpn. J. Appl. Phys. 27, 1397 (1988).CrossRefGoogle Scholar
8Suzuki, J., Kawarada, H., Mar, K., Wei, J., Yokota, Y., and Hiraki, A., Jpn. J. Appl. Phys. 28, L281 (1989).CrossRefGoogle Scholar
9Suzuki, K., Sawabe, A., Yasuda, H., and Inuzuka, T., Appl. Phys. Lett. 50, 728 (1987).CrossRefGoogle Scholar
10Hirose, Y. and Kondo, N., Jpn. Appl. Phys. Spring Meeting Proceedings, March 29, 434 (1988).Google Scholar
11Hirose, Y. and Mitsuigumi, M., New Diamond 4, 34 (1988).Google Scholar
12Hanssen, L.M., Carrington, W.A., Butler, J.E., and Snail, K.A., Mater. Lett. 7, 289 (1988).CrossRefGoogle Scholar
13Gaydon, A. G. and Wolfhard, H. G., Flames, 2nd ed. (Chapman & Hall Ltd., London, 1960).Google Scholar
14Solin, S.A. and Ramdas, A.K., Phys. Rev. B 1, 1687 (1970).CrossRefGoogle Scholar
15Knight, Diane S. and White, William B., J. Mater. Res. 4, 385 (1989).CrossRefGoogle Scholar