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Growth of semiconductors by the close-spaced vapor transport technique: A review

Published online by Cambridge University Press:  31 January 2011

G. Perrier ,
R. Philippe  and
J. P. Dodelet
G. Perrier
Affiliation:
GREP Mesures Physiques, 28, Av;Leon Jouhaux, 42023 St-Etienne Cedex 02, France
R. Philippe
Affiliation:
GREP Mesures Physiques, 28, Av;Leon Jouhaux, 42023 St-Etienne Cedex 02, France
J. P. Dodelet
Affiliation:
INRS-Energie, C. P. 1020, Varennes, Quebec. JOL2PO Canada
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Abstract

The close-spaced vapor transport (CSVT) is an efficient and cost-effective technique that allows the growth of polycrystalline as well as epitaxial thin layers of semiconductors. The close spacing between a source and a substrate, introduced in 1963 as a special feature in the vapor phase method, has been applied to about 18 semiconductors with a special focus on CdTe and GaAs. This paper reviews the close-spaced technique, the models presented to explain the film growth rates, the transport reactions, and film characteristics for all the semiconductors that have been obtained by CSVT. All-thin-film structures for solar cells or other applications are certainly feasible with the use of the CSVT technique when a good lattice matching exists between the successive layers.

Type
Commentaries and Reviews
Information
Journal of Materials Research , Volume 3 , Issue 5 , October 1988 , pp. 1031 - 1042
Copyright
Copyright © Materials Research Society 1988

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