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Growth of carbon nitride thin films by radio-frequency– plasma-enhanced chemical vapor deposition at low temperatures

Published online by Cambridge University Press:  31 January 2011

S. F. Lim ,
A. T. S. Wee ,
J. Lin ,
D. H. C. Chua  and
K. L. Tan
S. F. Lim
Affiliation:
Department of Physics, National University of Singapore, Singapore 119260
A. T. S. Wee
Affiliation:
Department of Physics, National University of Singapore, Singapore 119260
J. Lin
Affiliation:
Department of Physics, National University of Singapore, Singapore 119260
D. H. C. Chua
Affiliation:
Department of Physics, National University of Singapore, Singapore 119260
K. L. Tan
Affiliation:
Department of Physics, National University of Singapore, Singapore 119260
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Abstract

In this paper, we report our findings in the deposition of carbon nitride by radio-frequency–plasma-enhanced chemical vapor deposition (RF-PECVD) at temperatures slightly above room temperature (RT) and pressures of 800 mTorr using NH3 and C2H4 as source gases. The variation of the NH3/C2H4 source gas ratio and rf power is shown to affect the N/C ratio and sp3/sp2 ratio in a reproducible manner. An NyC ratio as high as 1.17 has been obtained under optimized growth conditions of NH3/C2H4 ratio of 7.3 and rf power of 90 W. X-ray diffraction (XRD) indicates the presence of microcrystalline carbon nitride in an amorphous CNx matrix with preferred orientation along the (100) direction. X-ray photoelectron microscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) studies show that our assignment of the XPS peaks and FTIR absorption bands are mutually consistent and in good agreement with published data. Both methods of analysis show the increase in the sp3 component with increase in N incorporation in the film.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 3 , March 1999 , pp. 1153 - 1159
Copyright
Copyright © Materials Research Society 1999

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References

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