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Growth of (110)-oriented diamond films by electron-assisted chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Kazuo Kumagai ,
Koichi Miyata ,
Kozo Nishimura  and
Koji Kobashi
Kazuo Kumagai
Affiliation:
Kobe Steel, Ltd., Electronics Research Laboratory, 1-5-5 Takatsuka-dai, Nishi-ku, Kobe 651-22, Japan
Koichi Miyata
Affiliation:
Kobe Steel, Ltd., Electronics Research Laboratory, 1-5-5 Takatsuka-dai, Nishi-ku, Kobe 651-22, Japan
Kozo Nishimura
Affiliation:
Kobe Steel, Ltd., Electronics Research Laboratory, 1-5-5 Takatsuka-dai, Nishi-ku, Kobe 651-22, Japan
Koji Kobashi
Affiliation:
Kobe Steel, Ltd., Electronics Research Laboratory, 1-5-5 Takatsuka-dai, Nishi-ku, Kobe 651-22, Japan
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Abstract

Diamond films were deposited on Si substrates by Electron-Assisted Chemical Vapor Deposition (EACVD) using various methane concentrations below 8.1%. It was found that the deposited films were strongly (110)-oriented. This seemed to arise from a high nucleation density of diamond caused by the initial deposition of an amorphous carbon film. A comparison of the graphite etching rate between EACVD and Microwave Plasma CVD (MPCVD) under the standard growth conditions showed that EACVD was able to etch graphite about five times faster than MPCVD. Hence, it was concluded that the differences in the growth rate and morphology between EACVD and MPCVD arise from the different graphite etching rates as well as different chemical species in the reaction gas.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 2 , February 1993 , pp. 314 - 320
Copyright
Copyright © Materials Research Society 1993

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References

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