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Growth, microstructure, and resistivity of RuO2 thin films grown by metal-organic chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

J. Vetrone ,
C. M. Foster ,
G-R. Bai ,
A. Wang ,
J. Patel  and
X. Wu
J. Vetrone
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439
C. M. Foster
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439
G-R. Bai
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439
A. Wang
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439
J. Patel
Affiliation:
Physics Department, Northern Illinois University, DeKalb, Illinois 60115
X. Wu
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439, and Physics Department, Northern Illinois University, DeKalb, Illinois 60115
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Abstract

Polycrystalline RuO2 thin films were grown by metal-organic chemical vapor deposition (MOCVD) on both SiO2/Si(001) and Pt/Ti/SiO2/Si(001) substrates. Films having a controllable and reproducible structural texture and phase purity were synthesized by carefully controlling deposition parameters. Moderate growth temperatures (∼350 °C) and low growth rates (<30 Å/min) produced highly (110)-textured RuO2 films. Highly (101)-textured RuO2 films were favored at slightly lower temperatures (∼300 °C) and much higher growth rates (>30 Å/min). The most conductive RuO3 films had resistivities of 34 to 40 µΩ−cm at 25 °C, an average grain size of 65 ± 15 nm, and a surface roughness (rms) of 3 to 10 nm. Both single-phase Ru and mixed Ru/RuO2 phase material were also fabricated at low temperatures (<350 °C) by using lower oxygen flow concentrations (<10%).

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 8 , August 1998 , pp. 2281 - 2290
Copyright
Copyright © Materials Research Society 1998

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