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Growth kinetics of chemically vapor deposited SiO2 films from silane oxidation

Published online by Cambridge University Press:  31 January 2011

Fernando Ojeda ,
Alejandro Castro-García ,
Cristina Gómez-Aleixandre  and
José María Albella
Fernando Ojeda
Affiliation:
Surface Science and Engineering Department, Materials Science Institute of Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain
Alejandro Castro-García
Affiliation:
Surface Science and Engineering Department, Materials Science Institute of Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain
Cristina Gómez-Aleixandre
Affiliation:
Surface Science and Engineering Department, Materials Science Institute of Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain
José María Albella
Affiliation:
Surface Science and Engineering Department, Materials Science Institute of Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain
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Abstract

The growth kinetics of SiO2 thin films obtained by low-pressure chemical vapor deposition (CVD) from SiH4/O2/N2 gas mixtures has been determined at different temperatures and flow rates. The results show that the film growth is originated by some intermediate species (e.g., SiOxHy) produced in the gas phase. At low temperatures the deposition rate is limited by some homogeneous reaction with an apparent activation energy of 1.42 eV. Furthermore, the observation of critical limits when total pressure, oxygen/silane flow ratio, and temperature are decreased gives support to a branching-chain mechanism of deposition. Finally, we have observed that the deposition rate shows a hysteresis behavior when varying the temperature within the 300–400 °C range, which has been attributed to the inhibition of silane oxidation by the Si–OH surface groups of the films grown on the reactor walls.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 8 , August 1998 , pp. 2308 - 2314
Copyright
Copyright © Materials Research Society 1998

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References

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