Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-23T12:21:40.711Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth, characterization, and electrical properties of PbZr0.52Ti0.48O3 thin films on buffered silicon substrates using pulsed laser deposition

Published online by Cambridge University Press:  31 January 2011

Walter M. Gilmore III ,
Soma Chattopadhyay ,
Alex Kvit ,
A. K. Sharma ,
C. B. Lee ,
Ward J. Collis ,
J. Sankar  and
J. Narayan
Walter M. Gilmore III
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, Greensboro, North Carolina 27411
Soma Chattopadhyay
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, Greensboro, North Carolina 27411
Alex Kvit
Affiliation:
North Carolina State University, Materials Science Department, Raleigh, North Carolina 27695–7916
A. K. Sharma
Affiliation:
North Carolina State University, Materials Science Department, Raleigh, North Carolina 27695–7916
C. B. Lee
Affiliation:
Department of Electrical Engineering, North Carolina Agricultural and Technical State University, 551 McNair Hall, Greensboro, North Carolina 27411
Ward J. Collis
Affiliation:
Department of Electrical Engineering, North Carolina Agricultural and Technical State University, 551 McNair Hall, Greensboro, North Carolina 27411
J. Sankar
Affiliation:
NSF Center for Advanced Materials and Smart Structures, North Carolina Agricultural and Technical State University, Greensboro, North Carolina 27411
J. Narayan
Affiliation:
North Carolina State University, Materials Science Department, Raleigh, North Carolina 27695–7916
Get access

Abstract

Epitaxial thin films of PbZr0.52Ti0.48O3 (PZT) were synthesized successfully on SrRuO3/SrTiO3/MgO/TiN/Si heterostructures by pulsed laser deposition. The films were single phase and had (001) orientation. The deposition parameters were varied to obtain the best epitaxial layer for each of the compounds. Transmission electron microscopy indicated good epitaxy for the entire heterostructure and sharp interfaces between the epilayers. Dielectric and P–E hysteresis loop measurements were carried out with evaporated Ag electrodes. The dielectric constant for the films was found to be between 400–450. The value of saturation polarization Ps was between 55–60 μC/cm2, and the coercive field Ec varied from 60–70 kV/cm. Integration of PZT films with silicon will be useful for future memory and micromechanical devices.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 1 , January 2003 , pp. 111 - 114
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Takayama, R. and Tomita, Y., J. Appl. Phys. 65, 1666 (1989).CrossRefGoogle Scholar
1.Udaykumar, K.R., Schuele, P., Chen, J., Krupanidhi, S., and Cross, L., J. Appl. Phys. 77, 3981 (1995).Google Scholar
2.Shimada, Y., Integr. Ferroelectr. 11, 229 (1995).Google Scholar
3.Kumazawa, T., Appl. Phys. Lett. 72, 608 (1998).CrossRefGoogle Scholar
4.Chang, L.H. and Anderson, W.A., Thin Solid Films 303, 94 (1997).Google Scholar
5.Al-Shareef, H.N., Kingon, A.I., Chen, X., and Auciello, O., J. Mater. Res. 9, 2960 (1996).Google Scholar
6.Sadashivan, S., J. Appl. Phys. 83, 2165 (1998).CrossRefGoogle Scholar
7.Eom, C.B., Dover, R.B. Van, Phillips, J.M., Werder, D.J., Marshall, J.H., Chen, C.H., Cava, R.J., Fleming, R.M., and Fork, D.K., Appl. Phys. Lett. 63, 2570 (1993).Google Scholar
8.Chattopadhyay, S., Kvit, A., Sharma, A.K., Venkatraman, S., Lee, C.B., Sankar, J., and Narayan, J., MRS Symp. Proc., Fall 1999 (in press)Google Scholar
9.Speck, J.S., Seifert, A., Pompe, W., and Ramesh, R., J. Appl. Phys. 76, 477 (1994).CrossRefGoogle Scholar
10.Haun, M.J., Furman, E., Jang, S.J., and Cross, L.E., Ferroelectrics 99, 12 (1989).Google Scholar
11.Lee, K.B., Tirumala, S., and Desu, S.B., Appl. Phys. Lett. 74, 1484 (1999).CrossRefGoogle Scholar
12.Cho, C.R., Francis, L.F., and Polla, D.L., Mater. Lett. 38, 125 (1999).Google Scholar