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Growth and characterization of c-axis oriented LiNbO3 film on a transparent conducting Al:ZnO inter-layer on Si

Published online by Cambridge University Press:  03 March 2011

Vinay Gupta ,
P. Bhattacharya ,
Yu. I. Yuzyuk ,
R.S. Katiyar ,
Monika Tomar  and
K. Sreenivas
Vinay Gupta
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico, 00931
P. Bhattacharya
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico, 00931
Yu. I. Yuzyuk
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico, 00931
R.S. Katiyar*
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico, 00931
Monika Tomar
Affiliation:
Department of Physics and Astrophysics, University of Delhi, Delhi-110007, India
K. Sreenivas
Affiliation:
Department of Physics and Astrophysics, University of Delhi, Delhi-110007, India
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

C-axis oriented lithium niobate (LiNbO3) films were deposited by pulsed-laser deposition on silicon using a transparent conducting interlayer of aluminum (Al)-doped zinc oxide (ZnO). Only two x-ray diffraction reflections corresponding to (006) and (0012) planes of LiNbO3 were observed in the films deposited at a 100-mTorr oxygen pressure and a 450–500 °C substrate temperature. Presence of sharp modes corresponding to E(TO) and A(LO), and absence of any superfluous peaks mainly around 900–905 cm−1 in the Raman spectra confirmed the formation of textured LiNbO3 film. Measured value of direct current and alternate current (AC) conductivities and dielectric constant are 8.6 × 10-12 Ω−1cm-1, 1.16 × 10-6 Ω−1cm-1, and 29.3, respectively, at room temperature. Behavior of dielectric constant and AC conductivity with frequency and temperature are close to the reported single-crystal data.

Keywords

Pulsed laser deposition (PLD)Dielectric propertiesRaman spectroscopy
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 8 , August 2004 , pp. 2235 - 2239
Copyright
Copyright © Materials Research Society 2004

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References

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