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Grain growth in boron doped LPCVD polysilicon films

Published online by Cambridge University Press:  31 January 2011

A. R. Sitaram ,
S. P. Murarka  and
T. T. Sheng
A. R. Sitaram
Affiliation:
Materials Engineering Department/CIE, Rensselaer Polytechnic Institute, Troy, New York 12180
S. P. Murarka
Affiliation:
Materials Engineering Department/CIE, Rensselaer Polytechnic Institute, Troy, New York 12180
T. T. Sheng
Affiliation:
AT & T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
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Abstract

Dopant induced grain growth in LPCVD polysilicon films has been investigated using BBr3 as the diffusion source at 900 and 950 °C. TEM and sheet resistance measurements indicate rapid growth under such doping conditions. Results are compared with the grain growth observed during (a) PBr3 doping of similar films, and (b) during anneals in ambients containing 1% oxygen in nitrogen, similar to that used during BBr3 or PBr3 doping. The results clearly demonstrate the rapid grain growth induced by both types of dopants, although phosphorus is more effective in inducing this grain growth.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 2 , February 1990 , pp. 360 - 364
Copyright
Copyright © Materials Research Society 1990

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References

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