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Functional piezoelectric yarn: Toward optimization of zinc oxide nanowires growth

Published online by Cambridge University Press:  10 September 2020

Dina Badawy
Affiliation:
Department of Material Engineering, The University of British Columbia, 6350 Stores Rd, Vancouver, BC, CanadaV6T 1Z4
Saeid Soltanian
Affiliation:
Department of Electrical and Computer Engineering, The University of British Columbia, 5500 - 2332 Main Mall, Vancouver, BC, CanadaV6T 1Z4
Peyman Servati
Affiliation:
Department of Electrical and Computer Engineering, The University of British Columbia, 5500 - 2332 Main Mall, Vancouver, BC, CanadaV6T 1Z4
Addie Bahi
Affiliation:
Department of Material Engineering, The University of British Columbia, 6350 Stores Rd, Vancouver, BC, CanadaV6T 1Z4
Frank Ko*
Affiliation:
Department of Material Engineering, The University of British Columbia, 6350 Stores Rd, Vancouver, BC, CanadaV6T 1Z4
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Growing zinc oxide (ZnO) nanowires (NWs) on yarns promotes smart sensing and creates opportunities for new applications. ZnO NWs sensing performance is influenced by its dimensions, which can be tailored by controlling the growth parameters. In this study, we investigated the effect of the growth parameters (time, temperature, and precursor concentration ratio) on the NWs’ morphology, dimensions, and piezoelectric performance. Our results showed that ZnO NWs produced with 6 and 9 h had long nanowires; however, they mainly got tangled with the nanowires on the adjacent fibers and peeled-off the fiber surface. Growth at a 1:1 precursor concentration ratio for 9 h produced the same nanowires’ length (~3 μm) as growth at a 3:1 precursor concentration ratio for 3 h. Among all of the studied growth conditions, ZnO NWs produced with a 3:1 precursor concentration ratio at 90 °C for 3 h showed uniform dimensions and stable electrical charge output.

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Article
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Copyright © The Author(s), 2020, published on behalf of Materials Research Society by Cambridge University Press

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