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Formation of ultrathin CoSi2 films using a two-step limited reaction process

Published online by Cambridge University Press:  03 March 2011

R.J. Schreutelkamp ,
W. Coppye ,
W. De Bosscher ,
R. van Meirhaeghe ,
L. van Meirhaeghe ,
J. Vanhellemont ,
B. Deweerdt ,
A. Lauwers  and
K. Maex
R.J. Schreutelkamp
Affiliation:
IMEC, Kapeldreef 75, B-3000 Leuven, Belgium
W. Coppye
Affiliation:
IMEC, Kapeldreef 75, B-3000 Leuven, Belgium
W. De Bosscher
Affiliation:
IMEC, Kapeldreef 75, B-3000 Leuven, Belgium
R. van Meirhaeghe
Affiliation:
Laboratorium voor Kristallografie en Studie van de Vaste Stof, Rijksuniversiteit Gent, Krijgslaan 281, B-9000 Gent, Belgium
L. van Meirhaeghe
Affiliation:
Laboratorium voor Kristallografie en Studie van de Vaste Stof, Rijksuniversiteit Gent, Krijgslaan 281, B-9000 Gent, Belgium
J. Vanhellemont
Affiliation:
IMEC, Kapeldreef 75, B-3000 Leuven, Belgium
B. Deweerdt
Affiliation:
IMEC, Kapeldreef 75, B-3000 Leuven, Belgium
A. Lauwers
Affiliation:
IMEC, Kapeldreef 75, B-3000 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3000 Leuven, Belgium
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Abstract

The formation of ultrathin (≤20 nm) and smooth CoSi2 layers on c–Si substrates has been studied by using a one- and a two-step RTP silicidation method. Pinhole-free silicide layers with a thickness down to ∼10–12 nm were formed on n−, n+, and p+ crystalline Si substrates in the one-step RTP process by sputtering of Co films as thin as 4 nm and subsequent silicidation at 750 °C for 5 or 30 s. The two-step RTP silicidation method is based on the consumption of only a small fraction of a thick sputtered Co film to form Co2Si or CoSi during a first RTP step at 400–500 °C. A selective etch follows to remove the unreacted Co film. During a second, higher temperature, RTP step CoSi2 is formed. Pinhole-free and smooth CoSi2 films with a thickness down to 20 nm were formed in this way on both n+ and p+ monocrystalline Si substrates.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 12 , December 1993 , pp. 3111 - 3121
Copyright
Copyright © Materials Research Society 1993

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