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Formation of carbon nanostructures with Ge and SiC nanoparticles prepared by direct current and radio frequency hybrid arc discharge

Published online by Cambridge University Press:  31 January 2011

Takeo Oku ,
T. Hirata ,
N. Motegi ,
R. Hatakeyama ,
N. Sato ,
T. Mieno ,
N. Y. Sato ,
H. Mase ,
M. Niwano  and
N. Miyamoto
Takeo Oku
Affiliation:
Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567–0047, Japan
T. Hirata
Affiliation:
Graduate School of Engineering, Tohoku University, Sendai 980–8579, Japan
N. Motegi
Affiliation:
Graduate School of Engineering, Tohoku University, Sendai 980–8579, Japan
R. Hatakeyama
Affiliation:
Graduate School of Engineering, Tohoku University, Sendai 980–8579, Japan
N. Sato
Affiliation:
Graduate School of Engineering, Tohoku University, Sendai 980–8579, Japan
T. Mieno
Affiliation:
Department of Physics, Shizuoka University, Shizuoka 422–8017, Japan
N. Y. Sato
Affiliation:
Department of Electrical and Electronic Engineering, Ibaraki University, Hitachi 316-0033, Japan
H. Mase
Affiliation:
Department of Electrical and Electronic Engineering, Ibaraki University, Hitachi 316-0033, Japan
M. Niwano
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Sendai 980-0813, Japan
N. Miyamoto
Affiliation:
Department of Electrical Engineering, Tohoku Gakuin University, Tagajo 985-0873, Japan
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Abstract

Carbon nanocage structures with Ge and SiC nanoparticles were synthesized by direct current and radio frequency (dc-rf) hybrid arc discharge of C, Ge, and Si elements. High-resolution images showed the formation of Ge and SiC nanoparticles and nanowires encapsulated in carbon nanocapsules and nanotubes. The growth direction of the Ge nanowires was found to be 〈111〉 of Ge, and a structure model for Ge/C interface was proposed. The present work indicates that the various carbon nanostructures with semiconductor nanoparticles and nanowires can be synthesized by the dc-rf hybrid arc-discharge method.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 10 , October 2000 , pp. 2182 - 2186
Copyright
Copyright © Materials Research Society 2000

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References

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