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Ferromagnetic signature in vanadium doped ZnO thin films grown by pulsed laser deposition

Published online by Cambridge University Press:  03 October 2016

S. Karamat ,
R.S. Rawat ,
P. Lee ,
T.L. Tan ,
C. Ke ,
R. Chen  and
H.D. Sun
S. Karamat*
Affiliation:
Natural Science and Science Education, National Institute of Education, Nanyang Technological University, Singapore 637616, Singapore; and Department of Physics, COMSATS Institute of Information Technology, Islamabad 45550, Pakistan
R.S. Rawat
Affiliation:
Natural Science and Science Education, National Institute of Education, Nanyang Technological University, Singapore 637616, Singapore
P. Lee
Affiliation:
Natural Science and Science Education, National Institute of Education, Nanyang Technological University, Singapore 637616, Singapore
T.L. Tan
Affiliation:
Natural Science and Science Education, National Institute of Education, Nanyang Technological University, Singapore 637616, Singapore
C. Ke
Affiliation:
Division of Physics and Applied Physics, School of Physical & Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
R. Chen
Affiliation:
Division of Physics and Applied Physics, School of Physical & Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
H.D. Sun
Affiliation:
Division of Physics and Applied Physics, School of Physical & Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
*
a) Address all correspondence to this author. e-mail: [email protected], [email protected]
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Abstract

Dilute magnetic semiconductors are attractive due to their potential in spintronic devices. In this work, vanadium doped ZnO system has been studied to see its future as a dilute magnetic semiconductor. Vanadium doped ZnO thin films where vanadium percentage is 2, 3, and 5% are deposited by pulsed laser technique (PLD). The lattice parameter c derived from the (002) diffraction peak increases as vanadium content increases, suggesting vanadium substitution for Zn in ZnO lattice. Photoluminescence (PL) measurements at low temperature shows the emission peak at 3.30 eV which hint toward p-type doping in ZnO. X-ray photoelectron spectroscopy (XPS) results show that vanadium exists in V2+ and V4+ valence state, which is in agreement with the XRD and PL results and support the vanadium doped ZnO phase. The ferromagnetic behavior also supports the formation of vanadium doped ZnO phase in thin film samples.

Keywords

Raman spectroscopyx-ray photoelectron spectroscopy (XPS)pulsed laser deposition
Type
Articles
Information
Journal of Materials Research , Volume 31 , Issue 20 , 28 October 2016 , pp. 3223 - 3229
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Copyright
Copyright © Materials Research Society 2016 

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