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Fabrication of ordered Ta2O5 nanodots using an anodic aluminum oxide template on Si substrate

Published online by Cambridge University Press:  03 March 2011

Ching-Jung Yang ,
Chih Chen ,
Pu-Wei Wu ,
Jia-Min Shieh ,
Shun-Min Wang  and
Shih-Wei Liang
Ching-Jung Yang
Affiliation:
Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan, Republic of China
Chih Chen*
Affiliation:
Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan, Republic of China
Pu-Wei Wu
Affiliation:
Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan, Republic of China
Jia-Min Shieh
Affiliation:
National Nano Device Laboratories, Hsinchu 30078, Taiwan, Republic of China
Shun-Min Wang
Affiliation:
Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan, Republic of China
Shih-Wei Liang
Affiliation:
Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan, Republic of China
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Ordered arrays of Ta2O5 nanodots were prepared using anodic aluminum oxide (AAO) as a template to support localized oxidation of TaN. Films of TaN (50 nm) and Al (1.5 μm) were deposited successively on p-type Si wafers and followed by a two-step anodization process at 40 V using oxalic acid as the electrolyte. The first anodization promoted growth of irregular AAO from overlying Al film. After chemical etching, the second anodization was performed to develop well-organized AAO channels and initiate oxidation of underlying TaN film to form tantalum oxide nanodots at the AAO pore bottoms. X-ray photoelectron spectroscopy results confirmed the chemical nature of nanodots as stoichmetric Ta2O5. X-ray diffraction demonstrated the amorphous characteristic of Ta2O5. As shown in field-emission scanning electron microscopy and transmission electron results, the Ta2O5 nanodots exhibited a hillock structure 80 nm in diameter at the bottom and 50 nm in height. We also synthesized 30-nm nanodots by adjusting AAO formation electrochemistry. This demonstrates the general applicability of the AAO template method for nanodot synthesis from nitride to oxide at a desirable size.

Keywords

NanoscaleNanostructure
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 4 , April 2007 , pp. 1064 - 1071
Copyright
Copyright © Materials Research Society 2007

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