Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-17T16:55:17.106Z Has data issue: false hasContentIssue false

Experimental phase diagram of SiC in CH3SiCl3–Ar–H2 system produced by fluidized bed chemical vapor deposition and its nuclear applications

Published online by Cambridge University Press:  05 August 2016

Rongzheng Liu
Affiliation:
Institute of Nuclear and New Energy Technology, Collaborative Innovation Center of Advanced Nuclear Energy Technology, Tsinghua University, Beijing 100084, China
Malin Liu*
Affiliation:
Institute of Nuclear and New Energy Technology, Collaborative Innovation Center of Advanced Nuclear Energy Technology, Tsinghua University, Beijing 100084, China
Jiaxing Chang
Affiliation:
Institute of Nuclear and New Energy Technology, Collaborative Innovation Center of Advanced Nuclear Energy Technology, Tsinghua University, Beijing 100084, China
*
a) Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

A systematic study of SiC layer preparation in CH3SiCl3–Ar–H2 system by fluidized bed chemical vapor deposition was given. The phase, morphology, grain size, and crystal structure of the products were investigated based on series characterizations methods. Free silicon was formed at lower temperatures while free carbon was formed at higher temperatures. By introducing argon in the deposition system, silicon formation was suppressed and cauliflower structure with subordinate small particles was observed. The formation mechanisms of different microstructures were discussed. The experimental phase diagram of CVD SiC composed of three regions of SiC + Si, SiC and SiC + C was established and boundaries of the three regions were given. The phase diagram obtained can be used to guide the new applications of SiC series materials. The low-temperature dense SiC, porous SiC with tunable densities, small grained SiC, and composite SiC materials were prepared successfully, also it was indicated that SiC jointing technology can be developed based on the phase diagram accordingly in the future.

Type
Articles
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Selvakumar, J. and Sathiyamoorthy, D.: Prospects of chemical vapor grown silicon carbide thin films using halogen-free single sources in nuclear reactor applications: A review. J. Mater. Res. 28(1), 136 (2013).CrossRefGoogle Scholar
Weber, W.J. and Gao, F.: Irradiation-induced defect clustering and amorphization in silicon carbide. J. Mater. Res. 25(12), 2349 (2010).Google Scholar
Tang, C., Tang, Y., Zhu, J., Zou, Y., Li, J., and Ni, X.: Design and manufacture of the fuel element for the 10 MW high temperature gas-cooled reactor. Nucl. Eng. Des. 218(1–3), 91 (2002).CrossRefGoogle Scholar
Nabielek, H., Kuhnlein, W., Schenk, W., Heit, W., Christ, A., and Ragoss, H.: Development of advanced HTR fuel-elements. Nucl. Eng. Des. 121(2), 199 (1990).CrossRefGoogle Scholar
Snead, L.L., Nozawa, T., Katoh, Y., Byun, T-S., Kondo, S., and Petti, D.A.: Handbook of SiC properties for fuel performance modeling. J. Nucl. Mater. 371(1–3), 329 (2007).Google Scholar
Forsberg, C.W., Terrani, K.A., Snead, L.L., and Katoh, Y.: Fluoride-salt-cooled high-temperature reactor (FHR) with silicon-carbide-matrix coated-particle fuel. Trans. Am. Nucl. Soc. 107, 907 (2012).Google Scholar
Meyer, M.K., Fielding, R., and Gan, J.: Fuel development for gas-cooled fast reactors. J. Nucl. Mater. 371(1–3), 281 (2007).Google Scholar
Sahin, S. and Sefidvash, F.: The fixed bed nuclear reactor concept. Energy Convers. Manage. 49(7), 1902 (2008).Google Scholar
Yueh, K., Carpenter, D., and Feinroth, H.: Clad in clay. Nucl. Eng. Int. 55(666), 14 (2010).Google Scholar
Kim, W-J., Kim, D., and Park, J.Y.: Fabrication and material issues for the application of SiC composites to LWR fuel cladding. Nucl. Eng. Technol. 45(4), 565 (2013).CrossRefGoogle Scholar
Katoh, Y., Snead, L.L., Henager, C.H. Jr., Hasegawa, A., Kohyama, A., Riccardi, B., and Hegeman, H.: Current status and critical issues for development of SiC composites for fusion applications. J. Nucl. Mater. 367, 659 (2007).Google Scholar
Snead, L.L., Nozawa, T., Ferraris, M., Katoh, Y., Shinavski, R., and Sawan, M.: Silicon carbide composites as fusion power reactor structural materials. J. Nucl. Mater. 417(1–3), 330 (2011).Google Scholar
Minato, K. and Fukuda, K.: Chemical vapor-deposition of silicon-carbide for coated fuel-particles. J. Nucl. Mater. 149(2), 233 (1987).Google Scholar
Liu, M., Liu, R., Liu, B., and Shao, Y.: Preparation of the coated nuclear fuel particle using the fluidized bed-chemical vapor deposition (FB-CVD) method. Procedia Eng. 102, 1890 (2015).Google Scholar
Lopez-Honorato, E., Meadows, P.J., Tan, J., and Xiao, P.: Control of stoichiometry, microstructure, and mechanical properties in SiC coatings produced by fluidized bed chemical vapor deposition. J. Mater. Res. 23(6), 1785 (2008).Google Scholar
Papasouliotis, G.D. and Sotirchos, S.V.: On the homogeneous chemistry of the thermal-decomposition of methyltrichlorosilane—Thermodynamic analysis and kinetic modeling. J. Electrochem. Soc. 141(6), 1599 (1994).Google Scholar
Minato, K. and Fukuda, K.: Structure of chemically vapor-deposited silicon-carbide for coated fuel-particles. J. Mater. Sci. 23(2), 699 (1988).Google Scholar
Kingon, A.I., Lutz, L.J., Liaw, P., and Davis, R.F.: Thermodynamic calculations for the chemical vapor-deposition of silicon-carbide. J. Am. Ceram. Soc. 66(8), 558 (1983).Google Scholar
Motojima, S. and Hasegawa, M.: Chemical vapor-deposition of SiC layers from a gas-mixture of CH3SiCl3 + H2 + Ar. Thin Solid Films 186(2), L39 (1990).CrossRefGoogle Scholar
Liu, R., Liu, B., Zhang, K., Liu, M., Shao, Y., and Tang, C.: High temperature oxidation behavior of SiC coating in TRISO coated particles. J. Nucl. Mater. 453(1), 107 (2014).Google Scholar
Nakashima, S. and Harima, H.: Raman investigation of SiC polytypes. Phys. Status Solidi A 162(1), 39 (1997).Google Scholar
Ma, Y., Wang, S., and Chen, Z-h.: Raman spectroscopy studies of the high-temperature evolution of the free carbon phase in polycarbosilane derived SiC ceramics. Ceram. Int. 36(8), 2455 (2010).Google Scholar
Allendorf, M.D. and Kee, R.J.: A model of silicon-carbide chemical vapor-deposition. J. Electrochem. Soc. 138(3), 841 (1991).Google Scholar
Lopez-Honorato, E., Tan, J., Meadows, P.J., Marsh, G., and Xiao, P.: TRISO coated fuel particles with enhanced SiC properties. J. Nucl. Mater. 392(2), 219 (2009).CrossRefGoogle Scholar
Rohmfeld, S., Hundhausen, M., and Ley, L.: Raman scattering in polycrystalline 3C–SiC: Influence of stacking faults. Phys. Rev. B 58(15), 9858 (1998).Google Scholar
Jung-Hwan, O., Byung-Jun, O., Doo-Jin, C., Geung-Ho, K., and Hue-Sup, S.: The effect of input gas ratio on the growth behavior of chemical vapor deposited SiC films. J. Mater. Sci. 36(7), 1695 (2001).Google Scholar
Yang, Y., Wang, H., Ji, Z., Han, Y., and Li, J.: A switch from classic crystallization to non-classic crystallization by controlling the diffusion of chemicals. CrystEngComm 16(33), 7633 (2015).Google Scholar
Besmann, T.M.: SOLGASMIX-PV, a computer program to calculate equilibrium relationships in complex chemical systems. ORNL/TM-5775 1 (1977).Google Scholar
Liu, R., Liu, M., Chang, J., Shao, Y., and Liu, B.: An improved design of TRISO particle with porous SiC inner layer by fluidized bed-chemical vapor deposition. J. Nucl. Mater. 467, 917 (2015).Google Scholar
Petti, D.A., Buongiorno, J., Maki, J.T., Hobbins, R.R., and Miller, G.K.: Key differences in the fabrication, irradiation and high temperature accident testing of US and German TRISO-coated particle fuel, and their implications on fuel performance. Nucl. Eng. Des. 222(2–3), 281 (2003).Google Scholar
Nabielek, H., Brown, P.E., and Offermann, P.: Silver release from coated particle fuel. Nucl. Technol. 35(2), 483 (1977).CrossRefGoogle Scholar
Jamison, L., Sridharan, K., Shannon, S., and Szlufarska, I.: Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide. J. Mater. Res. 29(23), 2871 (2014).Google Scholar
Khalifa, H.E., Deck, C.P., Gutierrez, O., Jacobsen, G.M., and Back, C.A.: Fabrication and characterization of joined silicon carbide cylindrical components for nuclear applications. J. Nucl. Mater. 457, 227 (2015).Google Scholar
Herrmann, M., Lippmann, W., and Hurtado, A.: High-temperature stability of laser-joined silicon carbide components. J. Nucl. Mater. 443(1–3), 458 (2013).CrossRefGoogle Scholar
Katoh, Y., Snead, L.L., Cheng, T., Shih, C., Lewis, W.D., Koyanagi, T., Hinoki, T., Henager, C.H. Jr., and Ferraris, M.: Radiation-tolerant joining technologies for silicon carbide ceramics and composites. J. Nucl. Mater. 448(1–3), 497 (2014).Google Scholar