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Experimental, analytical, and finite element analyses of nanoindentation of multilayer PZT/Pt/SiO2 thin film systems on silicon wafers

Published online by Cambridge University Press:  01 February 2006

C. Chima-Okereke ,
A.J. Bushby ,
M.J. Reece ,
R.W. Whatmore  and
Q. Zhang
C. Chima-Okereke
Affiliation:
Queen Mary, University of London, London E1 4NS, United Kingdom
A.J. Bushby
Affiliation:
Queen Mary, University of London, London E1 4NS, United Kingdom
M.J. Reece*
Affiliation:
Queen Mary, University of London, London E1 4NS, United Kingdom
R.W. Whatmore
Affiliation:
Cranfield University, Cranfield, Bedfordshire MK43 0AL, United Kingdom
Q. Zhang
Affiliation:
Cranfield University, Cranfield, Bedfordshire MK43 0AL, United Kingdom
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The mechanical properties of lead zirconate titanate (PZT) multilayer systems are needed to model and design micro-electromechanical systems (MEMS) devices. Nanoindentation is a promising tool for obtaining the elastic properties of thin films. However, no means exist to obtain the elastic modulus of the lead zirconate titanate (PZT) in the multilayer system. The indentation modulus versus a/t behavior of the multilayered PZT/Pt/SiO2 film system on a silicon substrate was investigated and compared with finite element models and a new analytical solution. Six different PZT film thicknesses were indented (100, 140, 400, 700, 1500, and 2000 nm), using 5-, 10-, and 20-μm radius indenters. Good agreement was shown between the finite element analysis (FEA) and analytical solutions, and the experimental data. However the behavior of multilayer systems is complex, making deconvolution of properties difficult for films of less than a micron thick.

Keywords

Elastic propertiesFerroelectricFilm
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 2 , February 2006 , pp. 409 - 419
Copyright
Copyright © Materials Research Society 2006

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