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Excimer laser deposition of c-axis oriented Pb(Zr, Ti)O3 thin films on silicon substrates with direct-current glow discharge

Published online by Cambridge University Press:  31 January 2011

Lirong Zheng ,
Xuhong Hu ,
Pingxiong Yang ,
W-ping Xu  and
Chenglu Lin
Lirong Zheng
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
Xuhong Hu
Affiliation:
Microelectronics Branch, Shanghai Institute of Metallurgy, Chinese Academy of Sciences Shanghai 200233, People's Republic of China
Pingxiong Yang
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
W-ping Xu
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
Chenglu Lin
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
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Abstract

Ferroelectric thin films of Pb(Zr, Ti)O3 (PZT) were fabricated on platinum-coated silicon using the process of direct-current glow discharge assisted laser deposition, where the substrate was electrically grounded. The films deposited at 730 °C with +800 V discharge voltage are oriented mostly with the c-axis perpendicular to the substrate surface, and exhibit good ferroelectric hysteresis loops. A possible mechanism for the improvement of the deposition process has been proposed.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 5 , May 1997 , pp. 1179 - 1182
Copyright
Copyright © Materials Research Society 1997

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