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Excimer laser cleaning, annealing, and ablation of β–SiC

Published online by Cambridge University Press:  31 January 2011

Pehr E. Pehrsson  and
Ray Kaplan
Pehr E. Pehrsson
Affiliation:
Surface Physics Branch, Code 6834, Electronics Technology Division, Naval Research Laboratory, Washington, DC 20375–5000
Ray Kaplan
Affiliation:
Surface Physics Branch, Code 6834, Electronics Technology Division, Naval Research Laboratory, Washington, DC 20375–5000
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Abstract

The effects of ArF excimer laser irradiation on β–SiC in UHV were examined for a variety of laser intensities and pulse densities. The samples were analyzed in situ with Auger and electron loss spectroscopies, and ex situ with x-ray photoelectron spectroscopy. With progressively higher laser intensities, the SiC surface was initially cleaned of carbon and oxygen surface contaminants, and the Si–LVV Auger lineshape changed from the oxide to the carbide. Still higher laser intensities then partially reordered the surface. A carbon surface layer developed, and the C-KLL lineshape transformed from carbidic to graphitic. Finally, the surface segregated into an almost pure Si layer and an underlying carbon-rich layer, followed by ablation and pitting. Bulk heating during laser exposure may enhance reordering of sputtered or implanted material.

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Articles
Information
Journal of Materials Research , Volume 4 , Issue 6 , December 1989 , pp. 1480 - 1490
Copyright
Copyright © Materials Research Society 1989

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