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Evidence for a nucleation barrier in the amorphous phase formation by solid-state reaction of Ni and single-crystal Zr

Published online by Cambridge University Press:  29 June 2016

A.M. Vredenberg ,
J. F. M. Westendorp ,
F. W. Saris ,
N. M. van der Pers  and
Th.H. de Keijser
A.M. Vredenberg
Affiliation:
FOM-Insitute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
J. F. M. Westendorp
Affiliation:
FOM-Insitute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
F. W. Saris
Affiliation:
FOM-Insitute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
N. M. van der Pers
Affiliation:
Laboratory of Metallurgy, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands
Th.H. de Keijser
Affiliation:
Laboratory of Metallurgy, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands
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Abstract

In an ultrahigh vacuum (UHV) environment, thin poly crystalline Ni films have been deposited on a Zr (112) single-crystal surface. In contrast to the case of poly crystalline Ni and Zr films, formation of amorphous Ni—Zr is not observed upon annealing at 300 °C for 11.5 h. The possible presence of an oxide or an amorphous phase diffusion barrier is ruled out and therefore the lack of a reaction must be due to a reaction barrier at the single-crystal Zr/ Ni interface. Either ion mixing of the interface with 400 keV, 5 × 1015 Xe+ /cm2, or deposition of a poly crystalline Zr layer in between the Zr single crystal and the Ni overlayer can overcome this reaction barrier. These results indicate that grain boundaries in polycrystalline Zr play an important role in amorphous Ni—Zr formation by a solid-state reaction.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 6 , December 1986 , pp. 774 - 780
Copyright
Copyright © Materials Research Society 1986

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