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Epitaxial thin films of PbTiO3/SnO2 heterostructures on sapphire

Published online by Cambridge University Press:  03 March 2011

H.L.M. Chang ,
H. Zhang ,
Z. Shen  and
Q. Wang
H.L.M. Chang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
H. Zhang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
Z. Shen
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
Q. Wang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
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Abstract

Epitaxial films of single-layer SnO2 and PbTiO3/SnO2 heterostructures were obtained on (0001) sapphire (α-Al2O3) substrates by metal-organic chemical vapor deposition. X-ray diffraction and transmission electron microscopy were used to characterize the structural properties of these films. The epitaxial relationship for the heterostructure PbTiO3/SnO2/sapphire was found to be (111) [011]PbTiO3 ‖ (100) [001]SnO2 ‖ (0001) [1100]α-Al2O3. The fact that epitaxial ferroelectric films were obtainable in such a structurally highly heterogeneous system suggests that a wide range of material selection is possible in exploring the kind of applications that need to utilize epitaxial ferroelectric films in a multilayered heterostructure.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 12 , December 1994 , pp. 3108 - 3112
Copyright
Copyright © Materials Research Society 1994

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References

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